Metal-like heat conduction in laser-excited InSb probed by picosecond time-resolved x-ray diffraction
Sondhauss, Peter LU ; Synnergren, Ola LU ; Hansen, Tue LU ; Canton, Sophie LU ; Enquist, Henrik LU
; Srivastava, Alok
LU
and Larsson, Jörgen
LU
(2008)
In Physical Review B (Condensed Matter and Materials Physics)
78(11).
- Abstract
- A semiconductor (InSb) showed transient metal- like heat conduction after excitation of a dense electron- hole plasma via short and intense light pulses. A related ultrafast strain relaxation was detected using picosecond time-resolved x-ray diffraction. The deduced heat conduction was, by a factor of 30, larger than the lattice contribution. The anomalously high heat conduction can be explained once the contribution from the degenerate photocarrier plasma is taken into account. The magnitude of the effect could provide the means for guiding heat in semiconductor nanostructures. In the course of this work, a quantitative model for the carrier dynamics in laser-irradiated semiconductors has been developed, which does not rely on any... (More)
- A semiconductor (InSb) showed transient metal- like heat conduction after excitation of a dense electron- hole plasma via short and intense light pulses. A related ultrafast strain relaxation was detected using picosecond time-resolved x-ray diffraction. The deduced heat conduction was, by a factor of 30, larger than the lattice contribution. The anomalously high heat conduction can be explained once the contribution from the degenerate photocarrier plasma is taken into account. The magnitude of the effect could provide the means for guiding heat in semiconductor nanostructures. In the course of this work, a quantitative model for the carrier dynamics in laser-irradiated semiconductors has been developed, which does not rely on any adjustable parameters or ad hoc assumptions. The model includes various light absorption processes (interband, free carrier, two photon, and dynamical Burstein- Moss shifts), ambipolar diffusion, energy transport (heat and chemical potential), electrothermal effects, Auger recombination, collisional excitation, and scattering (elastic and inelastic). The model accounts for arbitrary degrees of degeneracy. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1285991
- author
- Sondhauss, Peter
LU
; Synnergren, Ola
LU
; Hansen, Tue
LU
; Canton, Sophie
LU
; Enquist, Henrik
LU
; Srivastava, Alok
LU
and Larsson, Jörgen
LU
- organization
- publishing date
- 2008
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 78
- issue
- 11
- publisher
- American Physical Society
- external identifiers
-
- wos:000259690800052
- scopus:51749113977
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.78.115202
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Max-laboratory (011012005), Atomic physics (011013005), Chemical Physics (S) (011001060)
- id
- b50b7cf9-4785-486a-b9d9-e4dec72adbbb (old id 1285991)
- date added to LUP
- 2016-04-01 13:54:38
- date last changed
- 2022-01-27 21:49:17
@article{b50b7cf9-4785-486a-b9d9-e4dec72adbbb,
abstract = {{A semiconductor (InSb) showed transient metal- like heat conduction after excitation of a dense electron- hole plasma via short and intense light pulses. A related ultrafast strain relaxation was detected using picosecond time-resolved x-ray diffraction. The deduced heat conduction was, by a factor of 30, larger than the lattice contribution. The anomalously high heat conduction can be explained once the contribution from the degenerate photocarrier plasma is taken into account. The magnitude of the effect could provide the means for guiding heat in semiconductor nanostructures. In the course of this work, a quantitative model for the carrier dynamics in laser-irradiated semiconductors has been developed, which does not rely on any adjustable parameters or ad hoc assumptions. The model includes various light absorption processes (interband, free carrier, two photon, and dynamical Burstein- Moss shifts), ambipolar diffusion, energy transport (heat and chemical potential), electrothermal effects, Auger recombination, collisional excitation, and scattering (elastic and inelastic). The model accounts for arbitrary degrees of degeneracy.}},
author = {{Sondhauss, Peter and Synnergren, Ola and Hansen, Tue and Canton, Sophie and Enquist, Henrik and Srivastava, Alok and Larsson, Jörgen}},
issn = {{1098-0121}},
language = {{eng}},
number = {{11}},
publisher = {{American Physical Society}},
series = {{Physical Review B (Condensed Matter and Materials Physics)}},
title = {{Metal-like heat conduction in laser-excited InSb probed by picosecond time-resolved x-ray diffraction}},
url = {{http://dx.doi.org/10.1103/PhysRevB.78.115202}},
doi = {{10.1103/PhysRevB.78.115202}},
volume = {{78}},
year = {{2008}},
}