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Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC

Solovan, M. N.; Andrushchak, G. O.; Mostovyi, A. I. LU ; Kovaliuk, T. T.; Brus, V. V. and Maryanchuk, P. D. (2018) In Semiconductors 52(2). p.236-241
Abstract

Graphite/p-SiC Schottky diodes are fabricated using the recently suggested technique of transferring drawn graphite films onto p-SiC single-crystal substrates. The current–voltage and capacitance–voltage characteristics are measured at different temperatures and at different frequencies of a small-signal AC signal, respectively. The temperature dependences of the potential-barrier height and of the series resistance of the graphite/p-SiC junctions are measured and analyzed. The dominant mechanisms of the charge–carrier transport through the diodes are determined. It is shown that the dominant mechanisms of the transport of charge carriers through the graphite/p-Si Schottky diodes at a forward bias are multi-step tunneling recombination... (More)

Graphite/p-SiC Schottky diodes are fabricated using the recently suggested technique of transferring drawn graphite films onto p-SiC single-crystal substrates. The current–voltage and capacitance–voltage characteristics are measured at different temperatures and at different frequencies of a small-signal AC signal, respectively. The temperature dependences of the potential-barrier height and of the series resistance of the graphite/p-SiC junctions are measured and analyzed. The dominant mechanisms of the charge–carrier transport through the diodes are determined. It is shown that the dominant mechanisms of the transport of charge carriers through the graphite/p-Si Schottky diodes at a forward bias are multi-step tunneling recombination and tunneling described by the Newman formula (at high bias voltages). At reverse biases, the dominant mechanisms of charge transport are the Frenkel–Poole emission and tunneling. It is shown that the graphite/p-SiC Schottky diodes can be used as detectors of ultraviolet radiation since they have the open-circuit voltage Voc = 1.84 V and the short-circuit current density Isc = 2.9 mA/cm2 under illumination from a DRL 250-3 mercury–quartz lamp located 3 cm from the sample.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Semiconductors
volume
52
issue
2
pages
6 pages
publisher
American Institute of Physics
external identifiers
  • scopus:85041411748
ISSN
1063-7826
DOI
10.1134/S1063782618020185
language
English
LU publication?
yes
id
b920a432-aa22-4a0f-87d9-36f117956c5f
date added to LUP
2018-02-15 13:55:14
date last changed
2018-05-29 12:20:58
@article{b920a432-aa22-4a0f-87d9-36f117956c5f,
  abstract     = {<p>Graphite/p-SiC Schottky diodes are fabricated using the recently suggested technique of transferring drawn graphite films onto p-SiC single-crystal substrates. The current–voltage and capacitance–voltage characteristics are measured at different temperatures and at different frequencies of a small-signal AC signal, respectively. The temperature dependences of the potential-barrier height and of the series resistance of the graphite/p-SiC junctions are measured and analyzed. The dominant mechanisms of the charge–carrier transport through the diodes are determined. It is shown that the dominant mechanisms of the transport of charge carriers through the graphite/p-Si Schottky diodes at a forward bias are multi-step tunneling recombination and tunneling described by the Newman formula (at high bias voltages). At reverse biases, the dominant mechanisms of charge transport are the Frenkel–Poole emission and tunneling. It is shown that the graphite/p-SiC Schottky diodes can be used as detectors of ultraviolet radiation since they have the open-circuit voltage V<sub>oc</sub> = 1.84 V and the short-circuit current density I<sub>sc</sub> = 2.9 mA/cm<sup>2</sup> under illumination from a DRL 250-3 mercury–quartz lamp located 3 cm from the sample.</p>},
  author       = {Solovan, M. N. and Andrushchak, G. O. and Mostovyi, A. I. and Kovaliuk, T. T. and Brus, V. V. and Maryanchuk, P. D.},
  issn         = {1063-7826},
  language     = {eng},
  month        = {02},
  number       = {2},
  pages        = {236--241},
  publisher    = {American Institute of Physics},
  series       = {Semiconductors},
  title        = {Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC},
  url          = {http://dx.doi.org/10.1134/S1063782618020185},
  volume       = {52},
  year         = {2018},
}