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Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

Davtyan, Arman; Lehmann, Sebastian LU ; Kriegner, Dominik; Zamani, Reza R. LU ; Dick, Kimberly A. LU ; Bahrami, Danial; Al-Hassan, Ali; Leake, Steven J.; Pietsch, Ullrich and Holý, Václav (2017) In Journal of Synchrotron Radiation 24(5). p.981-990
Abstract

Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the direction in the vicinity of the wurtzite Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a... (More)

Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the direction in the vicinity of the wurtzite Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.The application of the synchrotron-radiation-based coherent nanobeam X-ray diffraction method to study the type, quantity and the exact distances in between stacking faults in single GaAs nanowires is demonstrated.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
coherent nanobeam X-ray diffraction, nanowire, Patterson function, stacking faults
in
Journal of Synchrotron Radiation
volume
24
issue
5
pages
10 pages
publisher
Wiley-Blackwell
external identifiers
  • scopus:85028705240
  • wos:000408902800011
ISSN
0909-0495
DOI
10.1107/S1600577517009584
language
English
LU publication?
yes
id
bca0e96e-e4b4-454d-8e8a-14f20c2a2dfa
date added to LUP
2017-09-26 13:24:50
date last changed
2018-01-16 13:26:47
@article{bca0e96e-e4b4-454d-8e8a-14f20c2a2dfa,
  abstract     = {<p>Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the direction in the vicinity of the wurtzite Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.The application of the synchrotron-radiation-based coherent nanobeam X-ray diffraction method to study the type, quantity and the exact distances in between stacking faults in single GaAs nanowires is demonstrated.</p>},
  author       = {Davtyan, Arman and Lehmann, Sebastian and Kriegner, Dominik and Zamani, Reza R. and Dick, Kimberly A. and Bahrami, Danial and Al-Hassan, Ali and Leake, Steven J. and Pietsch, Ullrich and Holý, Václav},
  issn         = {0909-0495},
  keyword      = {coherent nanobeam X-ray diffraction,nanowire,Patterson function,stacking faults},
  language     = {eng},
  month        = {09},
  number       = {5},
  pages        = {981--990},
  publisher    = {Wiley-Blackwell},
  series       = {Journal of Synchrotron Radiation},
  title        = {Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction},
  url          = {http://dx.doi.org/10.1107/S1600577517009584},
  volume       = {24},
  year         = {2017},
}