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In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

Cooil, Simon P.; Mazzola, Federico; Klemm, Hagen W.; Peschel, Gina; Niu, Yuran R. LU ; Zakharov, Alexei A. LU ; Simmons, Michelle Y.; Schmidt, Thomas; Evans, D. Andrew and Miwa, Jill A., et al. (2017) In ACS Nano 11(2). p.1683-1688
Abstract

We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ -layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned... (More)

We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ -layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.

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Contribution to journal
publication status
published
subject
keywords
2DEG, delta layers, LEEM, low-energy electron patterning, PEEM, silicon quantum confinement
in
ACS Nano
volume
11
issue
2
pages
6 pages
publisher
The American Chemical Society
external identifiers
  • scopus:85014188880
  • wos:000395357300059
ISSN
1936-0851
DOI
10.1021/acsnano.6b07359
language
English
LU publication?
yes
id
bd96e849-c2b9-4924-b4b2-b3be451705c4
date added to LUP
2017-03-15 08:02:56
date last changed
2018-05-29 10:53:08
@article{bd96e849-c2b9-4924-b4b2-b3be451705c4,
  abstract     = {<p>We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ -layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.</p>},
  author       = {Cooil, Simon P. and Mazzola, Federico and Klemm, Hagen W. and Peschel, Gina and Niu, Yuran R. and Zakharov, Alexei A. and Simmons, Michelle Y. and Schmidt, Thomas and Evans, D. Andrew and Miwa, Jill A. and Wells, Justin W.},
  issn         = {1936-0851},
  keyword      = {2DEG,delta layers,LEEM,low-energy electron patterning,PEEM,silicon quantum confinement},
  language     = {eng},
  month        = {02},
  number       = {2},
  pages        = {1683--1688},
  publisher    = {The American Chemical Society},
  series       = {ACS Nano},
  title        = {In Situ Patterning of Ultrasharp Dopant Profiles in Silicon},
  url          = {http://dx.doi.org/10.1021/acsnano.6b07359},
  volume       = {11},
  year         = {2017},
}