Ultra-low Voltage Embedded Memories – Design Aspects and a Biomedical Use-case

Abstract

As the Internet of Things (IoT) era emerges the need for ultra-low power (ULP) devices is becoming more eminent. A research-proven approach to achieve ULP consumption is to aggressively lower the supply voltage (V_DD) below or in the vicinity of the transistor threshold voltage (V_th) and operate the transistors in the subthreshold (sub-V_th) region. Operating below or near the threshold voltage, i.e., near threshold (near-V_th), incurs exponentially degrade performance, however, if tolerable, leads to a more energy efficient operation. In this doctoral thesis memory design for near-V_th and sub-V_th operation is explored using standard-cell based memories (SCMs) where the storage element, which accounts for ∼2/3 of total memory area, is replaced by a full-custom designed alternative. The designed memories are used in a biomedical circuit for atrial fibrillation detection.
Paper I presents an ULP synthesizable memory using commercial standard-cells complemented with a low-leakage full-custom developed D-Latch with integrated 3-state output buffers as read-logic.
Paper II presents two ULP synthesizable memories which use a full-custom developed dual-V_th D-Latch, where PMOS transistors are implemented using a lower-V_th than NMOS transistors. The read-logic is implemented using complementary metal oxide semiconductors (CMOS) multiplexers in one of the memories and a mixture of 3-state buffers and CMOS multiplexers in the second memory.
Paper III presents a synthesizable memory using an area-optimized full-custom pass-latch where the pass transistors are implemented using a lower-V_th than the remaining transistors.
Paper IV explores the use of a general purpose (GP) process option [instead of low power (LP)] to achieve a higher maximum frequency at ultra-low voltage (ULV) and presents a coherent summary of the different trade-offs for SCMs, i.e., area, leakage power, access speed, access energy and retention voltage.
Paper V presents a wide operating range synthesizable memory designed in a 28 nm fully-depleted silicon-on-insulator (FD-SOI) process that takes advantage of the body bias capabilities to compensate for a slow corner using forward body bias (FBB).
Paper VI is a case study of an atrial fibrillation (AF) detector designed for sub-V_th operation combined with an ULP memory using standard-cells. The detector is aimed to be operated together with a pacemaker on a single battery charge for 10 years.
Paper VII presents energy savings by using clock- and power-gating of the AF detector presented in Paper VI.

Abstract (Swedish)

As the Internet of Things (IoT) era emerges the need for ultra-low power (ULP) devices is becoming more eminent. A research-proven approach to achieve ULP consumption is to aggressively lower the supply voltage (V_DD) below or in the vicinity of the transistor threshold voltage (V_th) and operate the transistors in the subthreshold (sub-V_th) region. Operating below or near the threshold voltage, i.e., near threshold (near-V_th), incurs exponentially degrade performance, however, if tolerable, leads to a more energy efficient operation. In this doctoral thesis memory design for near-V_th and sub-V_th operation is explored using standard-cell based memories (SCMs) where the storage element, which accounts for ∼2/3 of total memory area, is replaced by a full-custom designed alternative. The designed memories are used in a biomedical circuit for atrial fibrillation detection.
Paper I presents an ULP synthesizable memory using commercial standard-cells complemented with a low-leakage full-custom developed D-Latch with integrated 3-state output buffers as read-logic.
Paper II presents two ULP synthesizable memories which use a full-custom developed dual-V_th D-Latch, where PMOS transistors are implemented using a lower-V_th than NMOS transistors. The read-logic is implemented using complementary metal oxide semiconductors (CMOS) multiplexers in one of the memories and a mixture of 3-state buffers and CMOS multiplexers in the second memory.
Paper III presents a synthesizable memory using an area-optimized full-custom pass-latch where the pass transistors are implemented using a lower-V_th than the remaining transistors.
Paper IV explores the use of a general purpose (GP) process option [instead of low power (LP)] to achieve a higher maximum frequency at ultra-low voltage (ULV) and presents a coherent summary of the different trade-offs for SCMs, i.e., area, leakage power, access speed, access energy and retention voltage.
Paper V presents a wide operating range synthesizable memory designed in a 28 nm fully-depleted silicon-on-insulator (FD-SOI) process that takes advantage of the body bias capabilities to compensate for a slow corner using forward body bias (FBB).
Paper VI is a case study of an atrial fibrillation (AF) detector designed for sub-V_th operation combined with an ULP memory using standard-cells. The detector is aimed to be operated together with a pacemaker on a single battery charge for 10 years.
Paper VII presents energy savings by using clock- and power-gating of the AF detector presented in Paper VI.

• author: Andersson, Oskar
• supervisor: Joachim Rodrigues
• opponent: Doctor De, Vivek, Intel Corporation, USA
• organization: Department of Electrical and Information Technology
• publishing date: 2016-08-15
• type: Thesis
• publication status: published
• subject: Other Electrical Engineering, Electronic Engineering, Information Engineering
• keywords: SRAM, CMOS, ultra-low voltage, ultra-low power, subthreshold, standard-cell based memories, atrial fibrillation, SRAM, CMOS, ultra-low voltage, ultra-low power, subthreshold, standard-cell based memories, atrial fibrillation
• pages: 228 pages
• defense location: Lecture hall E:1406, building E, Ole Römers väg 3, Lund University, Faculty of Engineering LTH, Lund
• defense date: 2016-09-09 10:15:00
• ISBN: 978-91-7623-726-7
• ISBN: 978-91-7623-725-0
• language: English
• LU publication?: yes
• id: be129130-5969-4179-9f6a-9a9951c38fe1
• date added to LUP: 2016-08-15 14:15:21
• date last changed: 2018-11-21 21:25:11