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Formation of cobalt silicide from filter metal vacuum arc deposited films

Whitlow, Harry J LU ; Zhang, Y ; Wang, CM ; McCready, DE ; Zhang, T and Wu, Y (2006) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 247(2). p.271-278
Abstract
The thermal reaction of Co film deposited on Si(111) surfaces by a high current filter metal vacuum arc (FMEVAD) system has been studied. After deposition the films were annealed over the 400-900 degrees C temperature range for 30 min. Rutherford backscattering spectrometry (RBS) was used to characterize the elemental depth distributions in the films subjected to different annealing temperatures. Ordered chemical phases were determined by glancing-incidence X-ray diffraction (GIXRD) and the morphology was determined by cross section transmission electron microscopy (TEM). The results show that the phases formed are Co2Si at 400 degrees C, CoSi + Coo at 500 degrees C, CoSi + CoSi2 at 600 degrees C and CoSi2 at (700-800 degrees C). At 900... (More)
The thermal reaction of Co film deposited on Si(111) surfaces by a high current filter metal vacuum arc (FMEVAD) system has been studied. After deposition the films were annealed over the 400-900 degrees C temperature range for 30 min. Rutherford backscattering spectrometry (RBS) was used to characterize the elemental depth distributions in the films subjected to different annealing temperatures. Ordered chemical phases were determined by glancing-incidence X-ray diffraction (GIXRD) and the morphology was determined by cross section transmission electron microscopy (TEM). The results show that the phases formed are Co2Si at 400 degrees C, CoSi + Coo at 500 degrees C, CoSi + CoSi2 at 600 degrees C and CoSi2 at (700-800 degrees C). At 900 degrees C, CiSi(2) was formed with a mixture of cubic cobalt and probably an amorphous cobalt oxide surface layer. The interface morphology was a rough cusp-like crenelation at 600 degrees C which became less pronounced after annealing at 800 degrees C. (c) 2006 Elsevier B.V. All rights reserved. (Less)
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organization
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Contribution to journal
publication status
published
subject
keywords
electron microscopy, ion beam analysis, silicide, synthesis
in
Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
volume
247
issue
2
pages
271 - 278
publisher
Elsevier
external identifiers
  • wos:000238182200018
  • scopus:33747514939
ISSN
0168-583X
DOI
10.1016/j.nimb.2006.02.016
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Nuclear Physics (Faculty of Technology) (011013007)
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beb9c119-5d51-439f-bd44-3083a7ab86a4 (old id 406742)
date added to LUP
2016-04-01 16:30:29
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2020-01-12 19:26:28
@article{beb9c119-5d51-439f-bd44-3083a7ab86a4,
  abstract     = {The thermal reaction of Co film deposited on Si(111) surfaces by a high current filter metal vacuum arc (FMEVAD) system has been studied. After deposition the films were annealed over the 400-900 degrees C temperature range for 30 min. Rutherford backscattering spectrometry (RBS) was used to characterize the elemental depth distributions in the films subjected to different annealing temperatures. Ordered chemical phases were determined by glancing-incidence X-ray diffraction (GIXRD) and the morphology was determined by cross section transmission electron microscopy (TEM). The results show that the phases formed are Co2Si at 400 degrees C, CoSi + Coo at 500 degrees C, CoSi + CoSi2 at 600 degrees C and CoSi2 at (700-800 degrees C). At 900 degrees C, CiSi(2) was formed with a mixture of cubic cobalt and probably an amorphous cobalt oxide surface layer. The interface morphology was a rough cusp-like crenelation at 600 degrees C which became less pronounced after annealing at 800 degrees C. (c) 2006 Elsevier B.V. All rights reserved.},
  author       = {Whitlow, Harry J and Zhang, Y and Wang, CM and McCready, DE and Zhang, T and Wu, Y},
  issn         = {0168-583X},
  language     = {eng},
  number       = {2},
  pages        = {271--278},
  publisher    = {Elsevier},
  series       = {Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms},
  title        = {Formation of cobalt silicide from filter metal vacuum arc deposited films},
  url          = {http://dx.doi.org/10.1016/j.nimb.2006.02.016},
  doi          = {10.1016/j.nimb.2006.02.016},
  volume       = {247},
  year         = {2006},
}