Ultrafast opto-terahertz photonic crystal modulator
(2007) In Optics Letters 32(6). p.680-682- Abstract
- We present an agile optically controlled switch or modulator of terahertz (THz) radiation. The element is based on a one-dimensional photonic crystal with a GaAs wafer inserted in the middle as a defect layer. The THz electric field is enhanced in the photonic structure at the surfaces of the Ga-As wafer. Excitation of the front GaAs surface by ultrashort 8 10 nm laser pulses then leads to an efficient modulation of the THz beam even at low photocarrier concentrations (approximate to 10(16) cm(-3)). The response time of the element to pulsed photoexcitation is about 130 ps. (c) 2007 Optical Society of America.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/671568
- author
- Fekete, L ; Kadlec, F ; Kuzel, P and Nemec, Hynek LU
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Optics Letters
- volume
- 32
- issue
- 6
- pages
- 680 - 682
- publisher
- Optical Society of America
- external identifiers
-
- wos:000244726900033
- scopus:33847674119
- ISSN
- 0146-9592
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060)
- id
- bed94550-d332-429d-a10a-020df18b0c67 (old id 671568)
- alternative location
- http://www.opticsinfobase.org/abstract.cfm?URI=ol-32-6-680
- date added to LUP
- 2016-04-01 16:21:00
- date last changed
- 2022-01-28 19:06:46
@article{bed94550-d332-429d-a10a-020df18b0c67,
abstract = {{We present an agile optically controlled switch or modulator of terahertz (THz) radiation. The element is based on a one-dimensional photonic crystal with a GaAs wafer inserted in the middle as a defect layer. The THz electric field is enhanced in the photonic structure at the surfaces of the Ga-As wafer. Excitation of the front GaAs surface by ultrashort 8 10 nm laser pulses then leads to an efficient modulation of the THz beam even at low photocarrier concentrations (approximate to 10(16) cm(-3)). The response time of the element to pulsed photoexcitation is about 130 ps. (c) 2007 Optical Society of America.}},
author = {{Fekete, L and Kadlec, F and Kuzel, P and Nemec, Hynek}},
issn = {{0146-9592}},
language = {{eng}},
number = {{6}},
pages = {{680--682}},
publisher = {{Optical Society of America}},
series = {{Optics Letters}},
title = {{Ultrafast opto-terahertz photonic crystal modulator}},
url = {{http://www.opticsinfobase.org/abstract.cfm?URI=ol-32-6-680}},
volume = {{32}},
year = {{2007}},
}