Gate control, g factors, and spin-orbit energy of p -type GaSb nanowire quantum dot devices
Dorsch, Sven LU ; Yeo, In-Pyo ; Lehmann, Sebastian LU ; Dick, Kimberly LU ; Thelander, Claes LU and Burke, Adam LU
(2021)
In Physical Review B
103(24).
- Abstract
Proposals for quantum information applications are frequently based on the coherent manipulation of spins confined to quantum dots. For these applications, p-type III-V material systems promise a reduction of the hyperfine interaction while maintaining large g factors and strong spin-orbit interaction. In this Letter, we study bottom-gated device architectures to realize single and serial multiquantum dot systems in Schottky-contacted p-type GaSb nanowires. We find that the effect of potentials applied to gate electrodes on the nanowire is highly localized to the immediate vicinity of the gate electrode only, which prevents the formation of double quantum dots with commonly used device architectures. We further study the transport... (More)
Proposals for quantum information applications are frequently based on the coherent manipulation of spins confined to quantum dots. For these applications, p-type III-V material systems promise a reduction of the hyperfine interaction while maintaining large g factors and strong spin-orbit interaction. In this Letter, we study bottom-gated device architectures to realize single and serial multiquantum dot systems in Schottky-contacted p-type GaSb nanowires. We find that the effect of potentials applied to gate electrodes on the nanowire is highly localized to the immediate vicinity of the gate electrode only, which prevents the formation of double quantum dots with commonly used device architectures. We further study the transport properties of a single quantum dot induced by bottom gating and find large gate-voltage dependent variations of the g∗ factors up to 8.1±0.2 as well as spin-orbit energies between 110 and 230 μeV.
(Less)
- author
- Dorsch, Sven
LU
; Yeo, In-Pyo
; Lehmann, Sebastian
LU
; Dick, Kimberly
LU
; Thelander, Claes
LU
and Burke, Adam
LU
- organization
- publishing date
- 2021
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B
- volume
- 103
- issue
- 24
- article number
- L241411
- publisher
- American Physical Society
- external identifiers
-
- scopus:85109042025
- ISSN
- 2469-9950
- DOI
- 10.1103/PhysRevB.103.L241411
- language
- English
- LU publication?
- yes
- id
- c0178bcf-65f5-4a1a-9232-c5676c5d2551
- date added to LUP
- 2021-08-16 14:45:11
- date last changed
- 2023-10-10 23:03:42
@article{c0178bcf-65f5-4a1a-9232-c5676c5d2551,
abstract = {{<p>Proposals for quantum information applications are frequently based on the coherent manipulation of spins confined to quantum dots. For these applications, p-type III-V material systems promise a reduction of the hyperfine interaction while maintaining large g factors and strong spin-orbit interaction. In this Letter, we study bottom-gated device architectures to realize single and serial multiquantum dot systems in Schottky-contacted p-type GaSb nanowires. We find that the effect of potentials applied to gate electrodes on the nanowire is highly localized to the immediate vicinity of the gate electrode only, which prevents the formation of double quantum dots with commonly used device architectures. We further study the transport properties of a single quantum dot induced by bottom gating and find large gate-voltage dependent variations of the g∗ factors up to 8.1±0.2 as well as spin-orbit energies between 110 and 230 μeV.</p>}},
author = {{Dorsch, Sven and Yeo, In-Pyo and Lehmann, Sebastian and Dick, Kimberly and Thelander, Claes and Burke, Adam}},
issn = {{2469-9950}},
language = {{eng}},
number = {{24}},
publisher = {{American Physical Society}},
series = {{Physical Review B}},
title = {{Gate control, g factors, and spin-orbit energy of p -type GaSb nanowire quantum dot devices}},
url = {{http://dx.doi.org/10.1103/PhysRevB.103.L241411}},
doi = {{10.1103/PhysRevB.103.L241411}},
volume = {{103}},
year = {{2021}},
}