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Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement

Zhang, Yunyan ; Davis, George ; Fonseka, H. Aruni ; Velichko, Anton ; Gustafsson, Anders LU ; Godde, Tillmann ; Saxena, Dhruv ; Aagesen, Martin ; Parkinson, Patrick W. and Gott, James A. , et al. (2019) In ACS Nano 13(5). p.5931-5938
Abstract

Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures (e.g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier... (More)

Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures (e.g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.

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publication status
published
subject
keywords
carrier collection, carrier confinement, III-V-V, laser, nanowire, quantum well
in
ACS Nano
volume
13
issue
5
pages
8 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:31067033
  • scopus:85066852615
ISSN
1936-0851
DOI
10.1021/acsnano.9b01775
language
English
LU publication?
yes
id
c11cb734-51fb-4230-97c1-219f868bf77f
date added to LUP
2019-07-04 09:46:21
date last changed
2019-11-20 05:49:51
@article{c11cb734-51fb-4230-97c1-219f868bf77f,
  abstract     = {<p>Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures (e.g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm<sup>2</sup>/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.</p>},
  author       = {Zhang, Yunyan and Davis, George and Fonseka, H. Aruni and Velichko, Anton and Gustafsson, Anders and Godde, Tillmann and Saxena, Dhruv and Aagesen, Martin and Parkinson, Patrick W. and Gott, James A. and Huo, Suguo and Sanchez, Ana M. and Mowbray, David J. and Liu, Huiyun},
  issn         = {1936-0851},
  language     = {eng},
  number       = {5},
  pages        = {5931--5938},
  publisher    = {The American Chemical Society (ACS)},
  series       = {ACS Nano},
  title        = {Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement},
  url          = {http://dx.doi.org/10.1021/acsnano.9b01775},
  doi          = {10.1021/acsnano.9b01775},
  volume       = {13},
  year         = {2019},
}