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A Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate

Jing, Yumei ; Huang, Shaoyun ; Wu, Jinxiong ; Meng, Mengmeng ; Li, Xiaobo ; Zhou, Yu ; Peng, Hailin and Xu, Hongqi LU (2019) In Advanced Materials 31(42).
Abstract

Quantum confined devices of 3D topological insulators are proposed to be promising and of great importance for studies of confined topological states and for applications in low-energy-dissipative spintronics and quantum information processing. The absence of energy gap on the topological insulator surface limits the experimental realization of a quantum confined system in 3D topological insulators. Here, the successful realization of single-electron transistor devices in Bi2Te3 nanoplates using state-of-the-art nanofabrication techniques is reported. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates.... (More)

Quantum confined devices of 3D topological insulators are proposed to be promising and of great importance for studies of confined topological states and for applications in low-energy-dissipative spintronics and quantum information processing. The absence of energy gap on the topological insulator surface limits the experimental realization of a quantum confined system in 3D topological insulators. Here, the successful realization of single-electron transistor devices in Bi2Te3 nanoplates using state-of-the-art nanofabrication techniques is reported. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low-temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well-defined Coulomb current oscillations and Coulomb-diamond-shaped charge-stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in 3D topological insulators, which should greatly stimulate research toward confined topological states, low-energy-dissipative devices, and quantum information processing.

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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
bismuth telluride, Coulomb blockade, single-electron transistors, topological insulators
in
Advanced Materials
volume
31
issue
42
article number
1903686
publisher
John Wiley and Sons Inc.
external identifiers
  • pmid:31489725
  • scopus:85071874613
ISSN
0935-9648
DOI
10.1002/adma.201903686
language
English
LU publication?
yes
id
c1da8444-de58-4b99-8a67-545d6b83dad2
date added to LUP
2019-09-24 14:09:40
date last changed
2020-10-20 04:01:49
@article{c1da8444-de58-4b99-8a67-545d6b83dad2,
  abstract     = {<p>Quantum confined devices of 3D topological insulators are proposed to be promising and of great importance for studies of confined topological states and for applications in low-energy-dissipative spintronics and quantum information processing. The absence of energy gap on the topological insulator surface limits the experimental realization of a quantum confined system in 3D topological insulators. Here, the successful realization of single-electron transistor devices in Bi<sub>2</sub>Te<sub>3</sub> nanoplates using state-of-the-art nanofabrication techniques is reported. Each device consists of a confined central island, two narrow constrictions that connect the central island to the source and drain, and surrounding gates. Low-temperature transport measurements demonstrate that the two narrow constrictions function as tunneling junctions and the device shows well-defined Coulomb current oscillations and Coulomb-diamond-shaped charge-stability diagrams. This work provides a controllable and reproducible way to form quantum confined systems in 3D topological insulators, which should greatly stimulate research toward confined topological states, low-energy-dissipative devices, and quantum information processing.</p>},
  author       = {Jing, Yumei and Huang, Shaoyun and Wu, Jinxiong and Meng, Mengmeng and Li, Xiaobo and Zhou, Yu and Peng, Hailin and Xu, Hongqi},
  issn         = {0935-9648},
  language     = {eng},
  number       = {42},
  publisher    = {John Wiley and Sons Inc.},
  series       = {Advanced Materials},
  title        = {A Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate},
  url          = {http://dx.doi.org/10.1002/adma.201903686},
  doi          = {10.1002/adma.201903686},
  volume       = {31},
  year         = {2019},
}