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A structure of CdS/CuxS quantum dots sensitized solar cells

Shen, Ting ; Bian, Lu ; Li, Bo LU ; Zheng, Kaibo LU ; Pullerits, Tönu LU and Tian, Jianjun (2016) In Applied Physics Letters 108(21).
Abstract

This work introduces a type of CdS/CuxS quantum dots (QDs) as sensitizers in quantum dot sensitized solar cells by in-situ cationic exchange reaction method where CdS photoanode is directly immersed in CuCl2 methanol solution to replace Cd2+ by Cu2+. The p-type CuxS layer on the surface of the CdS QDs can be considered as hole transport material, which not only enhances the light harvesting of photoanode but also boosts the charge separation after photo-excitation. Therefore, both the electron collection efficiency and power conversion efficiency of the solar cell are improved from 80% to 92% and from 1.21% to 2.78%, respectively.

Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
108
issue
21
article number
213901
publisher
American Institute of Physics (AIP)
external identifiers
  • pmid:27375297
  • wos:000377024400052
  • scopus:84971368286
ISSN
0003-6951
DOI
10.1063/1.4952435
language
English
LU publication?
yes
id
c50373c2-3a6d-410b-82a5-a19106bfd85a
date added to LUP
2017-01-30 09:31:45
date last changed
2025-01-12 20:24:17
@article{c50373c2-3a6d-410b-82a5-a19106bfd85a,
  abstract     = {{<p>This work introduces a type of CdS/Cu<sub>x</sub>S quantum dots (QDs) as sensitizers in quantum dot sensitized solar cells by in-situ cationic exchange reaction method where CdS photoanode is directly immersed in CuCl<sub>2</sub> methanol solution to replace Cd<sup>2+</sup> by Cu<sup>2+</sup>. The p-type Cu<sub>x</sub>S layer on the surface of the CdS QDs can be considered as hole transport material, which not only enhances the light harvesting of photoanode but also boosts the charge separation after photo-excitation. Therefore, both the electron collection efficiency and power conversion efficiency of the solar cell are improved from 80% to 92% and from 1.21% to 2.78%, respectively.</p>}},
  author       = {{Shen, Ting and Bian, Lu and Li, Bo and Zheng, Kaibo and Pullerits, Tönu and Tian, Jianjun}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  month        = {{05}},
  number       = {{21}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{A structure of CdS/Cu<sub>x</sub>S quantum dots sensitized solar cells}},
  url          = {{http://dx.doi.org/10.1063/1.4952435}},
  doi          = {{10.1063/1.4952435}},
  volume       = {{108}},
  year         = {{2016}},
}