Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Functionalized single-walled carbon-nanotube-blended P3HT-based high performance memory behavior thin-film transistor devices

Aïssa, B. ; Ali, A. ; Bentouaf, A. ; Khan, W. LU ; Hossain, M. I. ; Kroeger, J. and Malik Muhammad, N. (2020) In Nanotechnology 31(7).
Abstract

We report on the fabrication and transport properties of single-walled carbon nanotubes (SWCNT) blended with P3HT (poly 3-hexyl thiophene-2, 5-diyl). The composite is used as a hybrid organic active channel transistor. The performances of the fabricated devices were investigated as a function of the SWCNTs' loads in the composite, and their response evaluated under white light illumination. Our results show that for SWCNT loads ≤1.5 wt%, all the devices behave as p-type transistors, exhibiting excellent performance, with an I on /I off ratio of 104 and a maximum on-state current (I on) exceeding 80 μA. Moreover, compared with pristine transistors with a P3HT channel, the Hall mobility of these... (More)

We report on the fabrication and transport properties of single-walled carbon nanotubes (SWCNT) blended with P3HT (poly 3-hexyl thiophene-2, 5-diyl). The composite is used as a hybrid organic active channel transistor. The performances of the fabricated devices were investigated as a function of the SWCNTs' loads in the composite, and their response evaluated under white light illumination. Our results show that for SWCNT loads ≤1.5 wt%, all the devices behave as p-type transistors, exhibiting excellent performance, with an I on /I off ratio of 104 and a maximum on-state current (I on) exceeding 80 μA. Moreover, compared with pristine transistors with a P3HT channel, the Hall mobility of these hybrid TFTs was found to increase by more than one order of magnitude, i.e. increasing from 0.062 to 1.54 cm2 V-1 s-1. Finally, under light illumination, the transfer characteristics (i.e. I DS as a function of V GS) were found to systematically undergo a typical shift together with a fully-reversible memory behavior. A fundamental understanding of this work can assist in providing new routes for the development of reliable efficient hybrid organic-based optoelectronic devices.

(Less)
Please use this url to cite or link to this publication:
author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Carbon nanotube, memory effect, mobility, poly (3 hexylthiophene), thin-film transistor
in
Nanotechnology
volume
31
issue
7
article number
075201
publisher
IOP Publishing
external identifiers
  • scopus:85075812853
  • pmid:31661677
ISSN
0957-4484
DOI
10.1088/1361-6528/ab5274
language
English
LU publication?
yes
id
c5363fa6-0c38-482a-aaa3-4fd903b27085
date added to LUP
2021-01-04 11:03:24
date last changed
2023-03-16 00:55:38
@article{c5363fa6-0c38-482a-aaa3-4fd903b27085,
  abstract     = {{<p>We report on the fabrication and transport properties of single-walled carbon nanotubes (SWCNT) blended with P3HT (poly 3-hexyl thiophene-2, 5-diyl). The composite is used as a hybrid organic active channel transistor. The performances of the fabricated devices were investigated as a function of the SWCNTs' loads in the composite, and their response evaluated under white light illumination. Our results show that for SWCNT loads ≤1.5 wt%, all the devices behave as p-type transistors, exhibiting excellent performance, with an I <sub>on</sub> /I <sub>off</sub> ratio of 10<sup>4</sup> and a maximum on-state current (I <sub>on</sub>) exceeding 80 μA. Moreover, compared with pristine transistors with a P3HT channel, the Hall mobility of these hybrid TFTs was found to increase by more than one order of magnitude, i.e. increasing from 0.062 to 1.54 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. Finally, under light illumination, the transfer characteristics (i.e. I <sub>DS</sub> as a function of V <sub>GS</sub>) were found to systematically undergo a typical shift together with a fully-reversible memory behavior. A fundamental understanding of this work can assist in providing new routes for the development of reliable efficient hybrid organic-based optoelectronic devices.</p>}},
  author       = {{Aïssa, B. and Ali, A. and Bentouaf, A. and Khan, W. and Hossain, M. I. and Kroeger, J. and Malik Muhammad, N.}},
  issn         = {{0957-4484}},
  keywords     = {{Carbon nanotube; memory effect; mobility; poly (3 hexylthiophene); thin-film transistor}},
  language     = {{eng}},
  number       = {{7}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Functionalized single-walled carbon-nanotube-blended P3HT-based high performance memory behavior thin-film transistor devices}},
  url          = {{http://dx.doi.org/10.1088/1361-6528/ab5274}},
  doi          = {{10.1088/1361-6528/ab5274}},
  volume       = {{31}},
  year         = {{2020}},
}