Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor
(2013) In Journal of Physical Chemistry C 117(16). p.8468-8474- Abstract
- A vertical gate symmetrical molecular transistor is demonstrated. It includes self assembled monolayer of ferrocene molecules chemically bonded to be a flat Au source and Au nanoparticles drain electrodes while gated with the central gate electrode. Using this configuration, we show that negative differential resistance, symmetrical behavior, and rectification effects can be tuned by controlling the gate voltage. The I-V curves shift from symmetric to strongly rectifying over a gate voltage range of a few tenths of volts around a threshold value where the junction behaves symmetrically. This is due to charging of the nanoparticle contact, which modifies the spatial profile of the voltage across the junction, a fact that we have included in... (More)
- A vertical gate symmetrical molecular transistor is demonstrated. It includes self assembled monolayer of ferrocene molecules chemically bonded to be a flat Au source and Au nanoparticles drain electrodes while gated with the central gate electrode. Using this configuration, we show that negative differential resistance, symmetrical behavior, and rectification effects can be tuned by controlling the gate voltage. The I-V curves shift from symmetric to strongly rectifying over a gate voltage range of a few tenths of volts around a threshold value where the junction behaves symmetrically. This is due to charging of the nanoparticle contact, which modifies the spatial profile of the voltage across the junction, a fact that we have included in a simple theoretical model that explains our experimental results quite well. Our device design affords a new way to fine-tune the rectification of molecular devices in a way that does not necessarily involve the Coulomb charging of the wire. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3821537
- author
- Mentovich, Elad D. ; Rosenberg-Shraga, Natalie ; Kalifa, Itsik ; Gozin, Michael ; Mujica, Vladimiro ; Hansen, Thorsten LU and Richter, Shachar
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Physical Chemistry C
- volume
- 117
- issue
- 16
- pages
- 8468 - 8474
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000318211200061
- scopus:84876822695
- ISSN
- 1932-7447
- DOI
- 10.1021/jp311875g
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Chemical Physics (S) (011001060)
- id
- c7825df9-5a54-4b20-afab-7845cfb11aab (old id 3821537)
- date added to LUP
- 2016-04-01 10:40:15
- date last changed
- 2023-11-10 02:10:05
@article{c7825df9-5a54-4b20-afab-7845cfb11aab, abstract = {{A vertical gate symmetrical molecular transistor is demonstrated. It includes self assembled monolayer of ferrocene molecules chemically bonded to be a flat Au source and Au nanoparticles drain electrodes while gated with the central gate electrode. Using this configuration, we show that negative differential resistance, symmetrical behavior, and rectification effects can be tuned by controlling the gate voltage. The I-V curves shift from symmetric to strongly rectifying over a gate voltage range of a few tenths of volts around a threshold value where the junction behaves symmetrically. This is due to charging of the nanoparticle contact, which modifies the spatial profile of the voltage across the junction, a fact that we have included in a simple theoretical model that explains our experimental results quite well. Our device design affords a new way to fine-tune the rectification of molecular devices in a way that does not necessarily involve the Coulomb charging of the wire.}}, author = {{Mentovich, Elad D. and Rosenberg-Shraga, Natalie and Kalifa, Itsik and Gozin, Michael and Mujica, Vladimiro and Hansen, Thorsten and Richter, Shachar}}, issn = {{1932-7447}}, language = {{eng}}, number = {{16}}, pages = {{8468--8474}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Journal of Physical Chemistry C}}, title = {{Gated-Controlled Rectification of a Self-Assembled Monolayer-Based Transistor}}, url = {{http://dx.doi.org/10.1021/jp311875g}}, doi = {{10.1021/jp311875g}}, volume = {{117}}, year = {{2013}}, }