Advanced

Thermal desorption of oxides on Si(100) : A case study for the scanning photoelectron microscope at Max-Lab

Johansson, U. LU ; Zhang, H. and Nyholm, R. LU (1997) In Journal of Electron Spectroscopy and Related Phenomena 84(1-3). p.45-52
Abstract

A scanning photoelectron microscope, utilizing a focused beam of monochromatized photons in the energy range from 15 to 150 eV, has been used to study the thermal desorption of oxide layers on Si(100). The instrument can provide high-resolution photoelectron spectra from selected parts of the surface as well as images showing the lateral distribution (on a micrometer scale) of elements in different chemical states by monitoring the photoemission intensity of chemically shifted core levels. Both native (10-15 Å) and thick (200-400 Å) oxides have been studied. The desorption (at 840°C) of the native oxide proceeds through a phase of irregular (on a micrometer scale) and diminishing areas of dioxide until a clean surface is obtained. For... (More)

A scanning photoelectron microscope, utilizing a focused beam of monochromatized photons in the energy range from 15 to 150 eV, has been used to study the thermal desorption of oxide layers on Si(100). The instrument can provide high-resolution photoelectron spectra from selected parts of the surface as well as images showing the lateral distribution (on a micrometer scale) of elements in different chemical states by monitoring the photoemission intensity of chemically shifted core levels. Both native (10-15 Å) and thick (200-400 Å) oxides have been studied. The desorption (at 840°C) of the native oxide proceeds through a phase of irregular (on a micrometer scale) and diminishing areas of dioxide until a clean surface is obtained. For the thick oxide, annealing to 1100°C creates circular voids in the oxide layer which grow linearly in diameter with annealing time. The surface in these voids mainly consists of clean silicon but a small amount of remaining SiO2 is observed. This remaining dioxide most probably consists of small clusters or particles. For both types of oxide, we find, during and after desorption, a surface-shifted component in the Si 2p core level spectra indicating that at least parts of the surface have an ordered structure which most probably is a 2 × 1 reconstruction. © 1997 Elsevier Science B.V.

(Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Photoelectron microscopy, Silicon-oxide, Spectromicroscopy
in
Journal of Electron Spectroscopy and Related Phenomena
volume
84
issue
1-3
pages
8 pages
publisher
Elsevier
external identifiers
  • scopus:0002315478
ISSN
0368-2048
DOI
10.1016/S0368-2048(97)00004-2
language
English
LU publication?
yes
id
c7f92bf0-249d-489b-b648-abf9a30952c7
date added to LUP
2016-04-27 16:52:28
date last changed
2017-01-04 09:23:06
@article{c7f92bf0-249d-489b-b648-abf9a30952c7,
  abstract     = {<p>A scanning photoelectron microscope, utilizing a focused beam of monochromatized photons in the energy range from 15 to 150 eV, has been used to study the thermal desorption of oxide layers on Si(100). The instrument can provide high-resolution photoelectron spectra from selected parts of the surface as well as images showing the lateral distribution (on a micrometer scale) of elements in different chemical states by monitoring the photoemission intensity of chemically shifted core levels. Both native (10-15 Å) and thick (200-400 Å) oxides have been studied. The desorption (at 840°C) of the native oxide proceeds through a phase of irregular (on a micrometer scale) and diminishing areas of dioxide until a clean surface is obtained. For the thick oxide, annealing to 1100°C creates circular voids in the oxide layer which grow linearly in diameter with annealing time. The surface in these voids mainly consists of clean silicon but a small amount of remaining SiO<sub>2</sub> is observed. This remaining dioxide most probably consists of small clusters or particles. For both types of oxide, we find, during and after desorption, a surface-shifted component in the Si 2p core level spectra indicating that at least parts of the surface have an ordered structure which most probably is a 2 × 1 reconstruction. © 1997 Elsevier Science B.V.</p>},
  author       = {Johansson, U. and Zhang, H. and Nyholm, R.},
  issn         = {0368-2048},
  keyword      = {Photoelectron microscopy,Silicon-oxide,Spectromicroscopy},
  language     = {eng},
  month        = {03},
  number       = {1-3},
  pages        = {45--52},
  publisher    = {Elsevier},
  series       = {Journal of Electron Spectroscopy and Related Phenomena},
  title        = {Thermal desorption of oxides on Si(100) : A case study for the scanning photoelectron microscope at Max-Lab},
  url          = {http://dx.doi.org/10.1016/S0368-2048(97)00004-2},
  volume       = {84},
  year         = {1997},
}