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Direct Observations of Twin Formation Dynamics in Binary Semiconductors

Tornberg, Marcus LU ; Sjökvist, Robin LU orcid ; Kumar, Krishna LU ; Andersen, Christopher R. LU orcid ; Maliakkal, Carina B. LU ; Jacobsson, Daniel LU and Dick, Kimberly A. LU (2022) In ACS Nanoscience AU 2(1). p.49-56
Abstract
With the increased demand for controlled deterministic growth of III–V semiconductors at the nanoscale, the impact and interest of understanding defect formation and crystal structure switching becomes increasingly important. Vapor–liquid–solid (VLS) growth of semiconductor nanocrystals is an important mechanism for controlling and studying the formation of individual crystal layers and stacking defects. Using in situ studies, combining atomic resolution of transmission electron microscopy and controlled VLS crystal growth using metal organic chemical vapor deposition, we investigate the simplest achievable change in atomic layer stacking–single twinned layers formed in GaAs. Using Au-assisted GaAs nanowires of various diameters, we study... (More)
With the increased demand for controlled deterministic growth of III–V semiconductors at the nanoscale, the impact and interest of understanding defect formation and crystal structure switching becomes increasingly important. Vapor–liquid–solid (VLS) growth of semiconductor nanocrystals is an important mechanism for controlling and studying the formation of individual crystal layers and stacking defects. Using in situ studies, combining atomic resolution of transmission electron microscopy and controlled VLS crystal growth using metal organic chemical vapor deposition, we investigate the simplest achievable change in atomic layer stacking–single twinned layers formed in GaAs. Using Au-assisted GaAs nanowires of various diameters, we study the formation of individual layers with atomic resolution to reveal the growth difference in forming a twin defect. We determine that the formation of a twinned layer occurs significantly more slowly than that of a normal crystal layer. To understand this, we conduct thermodynamic modeling and determine that the propagation of a twin is limited by the energy cost of forming the twin interface. Finally, we determine that the slower propagation of twinned layers increases the probability of additional layers nucleating, such that multiple layers grow simultaneously. This observation challenges the current understanding that continuous uniform epitaxial growth, especially in the case of liquid-metal assisted nanowires, proceeds one single layer at a time and that its progression is limited by the nucleation rate. (Less)
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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
ACS Nanoscience AU
volume
2
issue
1
pages
49 - 56
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85124028756
  • pmid:37101516
ISSN
2694-2496
DOI
10.1021/acsnanoscienceau.1c00021
language
English
LU publication?
yes
id
c9799da4-354d-41df-95b0-e4480a7df82c
date added to LUP
2022-01-27 17:00:21
date last changed
2023-11-18 18:04:52
@article{c9799da4-354d-41df-95b0-e4480a7df82c,
  abstract     = {{With the increased demand for controlled deterministic growth of III–V semiconductors at the nanoscale, the impact and interest of understanding defect formation and crystal structure switching becomes increasingly important. Vapor–liquid–solid (VLS) growth of semiconductor nanocrystals is an important mechanism for controlling and studying the formation of individual crystal layers and stacking defects. Using in situ studies, combining atomic resolution of transmission electron microscopy and controlled VLS crystal growth using metal organic chemical vapor deposition, we investigate the simplest achievable change in atomic layer stacking–single twinned layers formed in GaAs. Using Au-assisted GaAs nanowires of various diameters, we study the formation of individual layers with atomic resolution to reveal the growth difference in forming a twin defect. We determine that the formation of a twinned layer occurs significantly more slowly than that of a normal crystal layer. To understand this, we conduct thermodynamic modeling and determine that the propagation of a twin is limited by the energy cost of forming the twin interface. Finally, we determine that the slower propagation of twinned layers increases the probability of additional layers nucleating, such that multiple layers grow simultaneously. This observation challenges the current understanding that continuous uniform epitaxial growth, especially in the case of liquid-metal assisted nanowires, proceeds one single layer at a time and that its progression is limited by the nucleation rate.}},
  author       = {{Tornberg, Marcus and Sjökvist, Robin and Kumar, Krishna and Andersen, Christopher R. and Maliakkal, Carina B. and Jacobsson, Daniel and Dick, Kimberly A.}},
  issn         = {{2694-2496}},
  language     = {{eng}},
  number       = {{1}},
  pages        = {{49--56}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Nanoscience AU}},
  title        = {{Direct Observations of Twin Formation Dynamics in Binary Semiconductors}},
  url          = {{http://dx.doi.org/10.1021/acsnanoscienceau.1c00021}},
  doi          = {{10.1021/acsnanoscienceau.1c00021}},
  volume       = {{2}},
  year         = {{2022}},
}