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High repetition rate XUV laser source based on OPCPA for photoemission electron microscopy applications

Harth, Anne LU ; Rudawski, Piotr LU ; Guo, Chen LU ; Miranda, Miguel LU ; Lorek, Eleonora LU ; Mårsell, Erik LU ; Larsen, Esben Witting LU ; Heyl, Christoph LU ; Matyschok, Jan and Binhammer, Thomas , et al. (2014) High Intensity Lasers and High Field Phenomena, HILAS 2014
Abstract

We present a 200 kHz XUV source driven by an optical parametric chirped pulse amplification system. The advantage for photoemission electron microscopy of this high-repetition rate will be discussed.

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author
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organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
host publication
High Intensity Lasers and High Field Phenomena, HILAS 2014
publisher
Optical Society of America
conference name
High Intensity Lasers and High Field Phenomena, HILAS 2014
conference location
Messe Berlin, Berlin, Germany
conference dates
2014-03-18 - 2014-03-20
external identifiers
  • scopus:85088345478
ISBN
9781557529954
language
English
LU publication?
yes
id
cb3fe4ca-bd55-4f1c-81a1-8e48d83918eb
date added to LUP
2019-05-22 17:18:25
date last changed
2022-03-25 19:12:53
@inproceedings{cb3fe4ca-bd55-4f1c-81a1-8e48d83918eb,
  abstract     = {{<p>We present a 200 kHz XUV source driven by an optical parametric chirped pulse amplification system. The advantage for photoemission electron microscopy of this high-repetition rate will be discussed.</p>}},
  author       = {{Harth, Anne and Rudawski, Piotr and Guo, Chen and Miranda, Miguel and Lorek, Eleonora and Mårsell, Erik and Larsen, Esben Witting and Heyl, Christoph and Matyschok, Jan and Binhammer, Thomas and Morgner, Uwe and Mikkelsen, Anders and L'Huillier, Anne and Arnold, Cord}},
  booktitle    = {{High Intensity Lasers and High Field Phenomena, HILAS 2014}},
  isbn         = {{9781557529954}},
  language     = {{eng}},
  month        = {{01}},
  publisher    = {{Optical Society of America}},
  title        = {{High repetition rate XUV laser source based on OPCPA for photoemission electron microscopy applications}},
  year         = {{2014}},
}