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Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography

Otnes, Gaute LU ; Heurlin, Magnus LU ; Graczyk, Mariusz LU ; Wallentin, Jesper LU ; Jacobsson, Daniel LU ; Berg, Alexander LU ; Maximov, Ivan LU and Borgström, Magnus T. LU (2016) In Nano Research 9(10). p.2852-2861
Abstract

Position controlled nanowire growth is important for nanowire-based optoelectronic components which rely on light emission or light absorption. For solar energy harvesting applications, dense arrays of nanowires are needed; however, a major obstacle to obtaining dense nanowire arrays is seed particle displacement and coalescing during the annealing stage prior to nanowire growth. Here, we explore three different strategies to improve pattern preservation of large-area catalyst particle arrays defined by nanoimprint lithography for nanowire growth. First, we see that heat treating the growth substrate prior to nanoimprint lithography improves pattern preservation. Second, we explore the possibility of improving pattern preservation by... (More)

Position controlled nanowire growth is important for nanowire-based optoelectronic components which rely on light emission or light absorption. For solar energy harvesting applications, dense arrays of nanowires are needed; however, a major obstacle to obtaining dense nanowire arrays is seed particle displacement and coalescing during the annealing stage prior to nanowire growth. Here, we explore three different strategies to improve pattern preservation of large-area catalyst particle arrays defined by nanoimprint lithography for nanowire growth. First, we see that heat treating the growth substrate prior to nanoimprint lithography improves pattern preservation. Second, we explore the possibility of improving pattern preservation by fixing the seed particles in place prior to annealing by modifying the growth procedure. And third, we show that a SiNx growth mask can fully prevent seed particle displacement. We show how these strategies allow us to greatly improve the pattern fidelity of grown InP nanowire arrays with dimensions suitable for solar cell applications, ultimately achieving 100% pattern preservation over the sampled area. The generic nature of these strategies is supported through the synthesis of GaAs and GaP nanowires. [Figure not available: see fulltext.]

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Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
metal–organic vapor phase epitaxial (MOVPE), nanoimprint lithography, nanowire, patterning, semiconductor
in
Nano Research
volume
9
issue
10
pages
10 pages
publisher
Springer
external identifiers
  • scopus:84982085280
  • wos:000385194100002
ISSN
1998-0124
DOI
10.1007/s12274-016-1165-z
language
English
LU publication?
yes
id
cb9ba65b-b29b-4da4-968d-b3ff129dc97d
date added to LUP
2016-10-21 11:43:37
date last changed
2017-07-30 05:16:16
@article{cb9ba65b-b29b-4da4-968d-b3ff129dc97d,
  abstract     = {<p>Position controlled nanowire growth is important for nanowire-based optoelectronic components which rely on light emission or light absorption. For solar energy harvesting applications, dense arrays of nanowires are needed; however, a major obstacle to obtaining dense nanowire arrays is seed particle displacement and coalescing during the annealing stage prior to nanowire growth. Here, we explore three different strategies to improve pattern preservation of large-area catalyst particle arrays defined by nanoimprint lithography for nanowire growth. First, we see that heat treating the growth substrate prior to nanoimprint lithography improves pattern preservation. Second, we explore the possibility of improving pattern preservation by fixing the seed particles in place prior to annealing by modifying the growth procedure. And third, we show that a SiN<sub>x</sub> growth mask can fully prevent seed particle displacement. We show how these strategies allow us to greatly improve the pattern fidelity of grown InP nanowire arrays with dimensions suitable for solar cell applications, ultimately achieving 100% pattern preservation over the sampled area. The generic nature of these strategies is supported through the synthesis of GaAs and GaP nanowires. [Figure not available: see fulltext.]</p>},
  author       = {Otnes, Gaute and Heurlin, Magnus and Graczyk, Mariusz and Wallentin, Jesper and Jacobsson, Daniel and Berg, Alexander and Maximov, Ivan and Borgström, Magnus T.},
  issn         = {1998-0124},
  keyword      = {metal–organic vapor phase epitaxial (MOVPE),nanoimprint lithography,nanowire,patterning,semiconductor},
  language     = {eng},
  month        = {10},
  number       = {10},
  pages        = {2852--2861},
  publisher    = {Springer},
  series       = {Nano Research},
  title        = {Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography},
  url          = {http://dx.doi.org/10.1007/s12274-016-1165-z},
  volume       = {9},
  year         = {2016},
}