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Quasi-free-standing monolayer hexagonal boron nitride on Ni

Suzuki, Satoru ; Haruyama, Yuichi ; Niibe, Masahito ; Tokushima, Takashi LU ; Yamaguchi, Akinobu ; Utsumi, Yuichi ; Ito, Atsushi ; Kadowaki, Ryo ; Maruta, Akane and Abukawa, Tadashi (2019) In Materials Research Express 6(1).
Abstract

The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN π and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital... (More)

The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN π and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital hybridization between h-BN and Ni.

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author
; ; ; ; ; ; ; ; and
publishing date
type
Contribution to journal
publication status
published
keywords
diffusion and precipitation method, hexagonal boron nitride, photoemission electron microscopy, x-ray absorption spectroscopy, x-ray emission spectroscopy
in
Materials Research Express
volume
6
issue
1
article number
016304
publisher
IOP Publishing
external identifiers
  • scopus:85056101588
ISSN
2053-1591
DOI
10.1088/2053-1591/aae5b4
language
English
LU publication?
no
id
ceee593b-470c-4d87-90e9-938de1e49b34
date added to LUP
2019-06-04 17:54:51
date last changed
2020-01-13 01:58:15
@article{ceee593b-470c-4d87-90e9-938de1e49b34,
  abstract     = {<p>The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN π and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital hybridization between h-BN and Ni.</p>},
  author       = {Suzuki, Satoru and Haruyama, Yuichi and Niibe, Masahito and Tokushima, Takashi and Yamaguchi, Akinobu and Utsumi, Yuichi and Ito, Atsushi and Kadowaki, Ryo and Maruta, Akane and Abukawa, Tadashi},
  issn         = {2053-1591},
  language     = {eng},
  month        = {01},
  number       = {1},
  publisher    = {IOP Publishing},
  series       = {Materials Research Express},
  title        = {Quasi-free-standing monolayer hexagonal boron nitride on Ni},
  url          = {http://dx.doi.org/10.1088/2053-1591/aae5b4},
  doi          = {10.1088/2053-1591/aae5b4},
  volume       = {6},
  year         = {2019},
}