Quasi-free-standing monolayer hexagonal boron nitride on Ni
(2019) In Materials Research Express 6(1).- Abstract
The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN π and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital... (More)
The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN π and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital hybridization between h-BN and Ni.
(Less)
- author
- Suzuki, Satoru ; Haruyama, Yuichi ; Niibe, Masahito ; Tokushima, Takashi LU ; Yamaguchi, Akinobu ; Utsumi, Yuichi ; Ito, Atsushi ; Kadowaki, Ryo ; Maruta, Akane and Abukawa, Tadashi
- publishing date
- 2019-01-01
- type
- Contribution to journal
- publication status
- published
- keywords
- diffusion and precipitation method, hexagonal boron nitride, photoemission electron microscopy, x-ray absorption spectroscopy, x-ray emission spectroscopy
- in
- Materials Research Express
- volume
- 6
- issue
- 1
- article number
- 016304
- publisher
- IOP Publishing
- external identifiers
-
- scopus:85056101588
- ISSN
- 2053-1591
- DOI
- 10.1088/2053-1591/aae5b4
- language
- English
- LU publication?
- no
- id
- ceee593b-470c-4d87-90e9-938de1e49b34
- date added to LUP
- 2019-06-04 17:54:51
- date last changed
- 2022-04-10 17:58:26
@article{ceee593b-470c-4d87-90e9-938de1e49b34,
abstract = {{<p>The electronic structure of monolayer hexagonal boron nitride grown on Ni by the diffusion and precipitation method was studied by x-ray absorption spectroscopy, emission spectroscopy, x-ray photoelectron spectroscopy and micro-ultraviolet photoemission spectroscopy. No indication of hybridization between h-BN π and Ni 3d orbitals was observed. That is, the monolayer h-BN was found to be in the quasi-free-standing state. These results are in striking contrast to those of previous studies in which h-BN was strongly bound to the Ni surface by the orbital hybridization. The absence of hybridization is attributed to absence of a Ni(111) surface in this study. The lattice-matched Ni(111) surface is considered to be essential to orbital hybridization between h-BN and Ni.</p>}},
author = {{Suzuki, Satoru and Haruyama, Yuichi and Niibe, Masahito and Tokushima, Takashi and Yamaguchi, Akinobu and Utsumi, Yuichi and Ito, Atsushi and Kadowaki, Ryo and Maruta, Akane and Abukawa, Tadashi}},
issn = {{2053-1591}},
keywords = {{diffusion and precipitation method; hexagonal boron nitride; photoemission electron microscopy; x-ray absorption spectroscopy; x-ray emission spectroscopy}},
language = {{eng}},
month = {{01}},
number = {{1}},
publisher = {{IOP Publishing}},
series = {{Materials Research Express}},
title = {{Quasi-free-standing monolayer hexagonal boron nitride on Ni}},
url = {{http://dx.doi.org/10.1088/2053-1591/aae5b4}},
doi = {{10.1088/2053-1591/aae5b4}},
volume = {{6}},
year = {{2019}},
}