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Fused silica microchannel fabrication with smooth surface and high etching selectivity

Morikawa, Kyojiro ; Chen, Po Yin ; Tran, Hai Linh ; Kazoe, Yutaka ; Chen, Chihchen and Kitamori, Takehiko LU (2023) In Journal of Micromechanics and Microengineering 33(4).
Abstract

Channel fabrication technology has become increasingly important for microfluidic and nanofluidic devices. In particular, glass channels have high chemical and physical stability, high optical transparency, and ease of surface modification, so that there is increasing interest in glass microfluidic devices for chemical experiments in microfluidics and nanofluidics. For the fabrication of glass channels, especially those with a high aspect ratio (depth/width), lithography using a metal resist and dry etching have mainly been used. However, there are still issues involving the surface roughness of the etched channel and the low etching selectivity. In this study, a microchannel fabrication method with high etching selectivity that... (More)

Channel fabrication technology has become increasingly important for microfluidic and nanofluidic devices. In particular, glass channels have high chemical and physical stability, high optical transparency, and ease of surface modification, so that there is increasing interest in glass microfluidic devices for chemical experiments in microfluidics and nanofluidics. For the fabrication of glass channels, especially those with a high aspect ratio (depth/width), lithography using a metal resist and dry etching have mainly been used. However, there are still issues involving the surface roughness of the etched channel and the low etching selectivity. In this study, a microchannel fabrication method with high etching selectivity that produces a smooth etched surface was developed. First, interference during dry etching by remaining Cr particles after the photolithography and Cr etching processes was assumed as the cause of the rough etched surface. Three different dry etching processes were introduced to verify this. In process 1 without removal of the Cr particles, the etched surface was not flat and had a 1 μm scale roughness. In process 2 where a cleaning process was included and high power etching was conducted, a smooth surface with a 1 nm scale roughness and a faster etching rate of 0.3 μm min−1 were obtained. For this high-power etching condition, the etching selectivity (fused silica/Cr) was relatively low at approximately 39-43. In process 3 with a cleaning process and low-power etching, although the etching rate was relatively low at 0.1 μm min−1, a smooth surface with 1 nm scale roughness (10 nm scale roughness deeper than 40 μm in the depth region) and a much higher etching selectivity of approximately 79-84 were obtained. The dry etching method presented in this study represents a significant contribution to microfluidics/nanofluidics for microchannel/nanochannel fabrication.

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; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
dry etching, glass channel fabrication, microfluidics, nanofluidics, surface roughness
in
Journal of Micromechanics and Microengineering
volume
33
issue
4
article number
047001
publisher
IOP Publishing
external identifiers
  • scopus:85149593426
ISSN
0960-1317
DOI
10.1088/1361-6439/acbe4a
language
English
LU publication?
yes
additional info
Publisher Copyright:
id
cf15cefa-283c-45c9-83ff-e06715531cc7
date added to LUP
2023-04-24 14:27:31
date last changed
2023-10-11 09:07:35
@article{cf15cefa-283c-45c9-83ff-e06715531cc7,
  abstract     = {{<p>Channel fabrication technology has become increasingly important for microfluidic and nanofluidic devices. In particular, glass channels have high chemical and physical stability, high optical transparency, and ease of surface modification, so that there is increasing interest in glass microfluidic devices for chemical experiments in microfluidics and nanofluidics. For the fabrication of glass channels, especially those with a high aspect ratio (depth/width), lithography using a metal resist and dry etching have mainly been used. However, there are still issues involving the surface roughness of the etched channel and the low etching selectivity. In this study, a microchannel fabrication method with high etching selectivity that produces a smooth etched surface was developed. First, interference during dry etching by remaining Cr particles after the photolithography and Cr etching processes was assumed as the cause of the rough etched surface. Three different dry etching processes were introduced to verify this. In process 1 without removal of the Cr particles, the etched surface was not flat and had a 1 μm scale roughness. In process 2 where a cleaning process was included and high power etching was conducted, a smooth surface with a 1 nm scale roughness and a faster etching rate of 0.3 μm min<sup>−1</sup> were obtained. For this high-power etching condition, the etching selectivity (fused silica/Cr) was relatively low at approximately 39-43. In process 3 with a cleaning process and low-power etching, although the etching rate was relatively low at 0.1 μm min<sup>−1</sup>, a smooth surface with 1 nm scale roughness (10 nm scale roughness deeper than 40 μm in the depth region) and a much higher etching selectivity of approximately 79-84 were obtained. The dry etching method presented in this study represents a significant contribution to microfluidics/nanofluidics for microchannel/nanochannel fabrication.</p>}},
  author       = {{Morikawa, Kyojiro and Chen, Po Yin and Tran, Hai Linh and Kazoe, Yutaka and Chen, Chihchen and Kitamori, Takehiko}},
  issn         = {{0960-1317}},
  keywords     = {{dry etching; glass channel fabrication; microfluidics; nanofluidics; surface roughness}},
  language     = {{eng}},
  number       = {{4}},
  publisher    = {{IOP Publishing}},
  series       = {{Journal of Micromechanics and Microengineering}},
  title        = {{Fused silica microchannel fabrication with smooth surface and high etching selectivity}},
  url          = {{http://dx.doi.org/10.1088/1361-6439/acbe4a}},
  doi          = {{10.1088/1361-6439/acbe4a}},
  volume       = {{33}},
  year         = {{2023}},
}