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Thermally driven ballistic rectifier

Matthews, J. ; Sanchez, D. ; Larsson, Marcus LU and Linke, Heiner LU orcid (2012) In Physical Review B (Condensed Matter and Materials Physics) 85(20).
Abstract
The response of electric devices to an applied thermal gradient has, so far, been studied almost exclusively in two-terminal devices. Here we present measurements of the response to a thermal bias of a four-terminal, quasiballistic junction with a central scattering site. We find a novel transverse thermovoltage measured across isothermal contacts. Using a multiterminal scattering model extended to the weakly nonlinear voltage regime, we show that the device's response to a thermal bias can be predicted from its nonlinear response to an electric bias. Our approach forms a foundation for the discovery and understanding of advanced, nonlocal, thermoelectric phenomena that in the future may lead to novel thermoelectric device concepts.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
85
issue
20
article number
205309
publisher
American Physical Society
external identifiers
  • wos:000303859200003
  • scopus:84861557983
ISSN
1098-0121
DOI
10.1103/PhysRevB.85.205309
language
English
LU publication?
yes
id
d1950452-2adb-43f3-88ad-ce852b20592e (old id 2826549)
date added to LUP
2016-04-01 13:47:49
date last changed
2023-11-12 22:01:16
@article{d1950452-2adb-43f3-88ad-ce852b20592e,
  abstract     = {{The response of electric devices to an applied thermal gradient has, so far, been studied almost exclusively in two-terminal devices. Here we present measurements of the response to a thermal bias of a four-terminal, quasiballistic junction with a central scattering site. We find a novel transverse thermovoltage measured across isothermal contacts. Using a multiterminal scattering model extended to the weakly nonlinear voltage regime, we show that the device's response to a thermal bias can be predicted from its nonlinear response to an electric bias. Our approach forms a foundation for the discovery and understanding of advanced, nonlocal, thermoelectric phenomena that in the future may lead to novel thermoelectric device concepts.}},
  author       = {{Matthews, J. and Sanchez, D. and Larsson, Marcus and Linke, Heiner}},
  issn         = {{1098-0121}},
  language     = {{eng}},
  number       = {{20}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B (Condensed Matter and Materials Physics)}},
  title        = {{Thermally driven ballistic rectifier}},
  url          = {{https://lup.lub.lu.se/search/files/3596748/2968926.pdf}},
  doi          = {{10.1103/PhysRevB.85.205309}},
  volume       = {{85}},
  year         = {{2012}},
}