Self-catalyzed MBE grown GaAs/GaAsxSb1-x core-shell nanowires in ZB and WZ crystal structures
(2013) In Nanotechnology 24(40).- Abstract
- We have investigated the growth of self-catalyzed GaAs/GaAsxSb1-x core-shell nanowires directly on Si(111) substrates by molecular beam epitaxy. The compositions of the GaAsxSb1-x shells are tuned in a wide range where the Sb-content is varied from 10 to similar to 70%, covering the miscibility gap. In addition, the GaAsxSb1-x shells are grown on both zinc blende (ZB) and wurtzite (WZ) crystal structures. Morphological and structural characterizations of the grown nanowires indicate successful transfer of the GaAs core crystal structure to the GaAsxSb1-x shells for both ZB and WZ nanowires, with slower shell growth rate on the WZ segments.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4102049
- author
- Gorji, Sepideh LU ; Munshi, A. Mazid ; Dheeraj, Dasa L. ; Fimland, Bjorn-Ove ; Weman, Helge and Dick Thelander, Kimberly LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 24
- issue
- 40
- article number
- 405601
- publisher
- IOP Publishing
- external identifiers
-
- wos:000324516300013
- scopus:84884240997
- pmid:24028926
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/24/40/405601
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- d69f089c-bb0b-4c42-8d3b-d919f931874e (old id 4102049)
- date added to LUP
- 2016-04-01 10:02:52
- date last changed
- 2023-08-30 16:23:12
@article{d69f089c-bb0b-4c42-8d3b-d919f931874e, abstract = {{We have investigated the growth of self-catalyzed GaAs/GaAsxSb1-x core-shell nanowires directly on Si(111) substrates by molecular beam epitaxy. The compositions of the GaAsxSb1-x shells are tuned in a wide range where the Sb-content is varied from 10 to similar to 70%, covering the miscibility gap. In addition, the GaAsxSb1-x shells are grown on both zinc blende (ZB) and wurtzite (WZ) crystal structures. Morphological and structural characterizations of the grown nanowires indicate successful transfer of the GaAs core crystal structure to the GaAsxSb1-x shells for both ZB and WZ nanowires, with slower shell growth rate on the WZ segments.}}, author = {{Gorji, Sepideh and Munshi, A. Mazid and Dheeraj, Dasa L. and Fimland, Bjorn-Ove and Weman, Helge and Dick Thelander, Kimberly}}, issn = {{0957-4484}}, language = {{eng}}, number = {{40}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Self-catalyzed MBE grown GaAs/GaAsxSb1-x core-shell nanowires in ZB and WZ crystal structures}}, url = {{http://dx.doi.org/10.1088/0957-4484/24/40/405601}}, doi = {{10.1088/0957-4484/24/40/405601}}, volume = {{24}}, year = {{2013}}, }