Modeling the formation of InP/GaxIn1-xP axial nanowire heterostructures
(2019) 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 In Journal of Physics: Conference Series 1410(1).- Abstract
A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is... (More)
A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is approximately two times smaller than the InAs/GaxIn1-xAs axial heterojunction width.
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- author
- Koryakin, A. A. ; Leshchenko, E. D. LU and Dubrovskii, V. G.
- organization
- publishing date
- 2019
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Physics: Conference Series
- volume
- 1410
- issue
- 1
- article number
- 012058
- publisher
- IOP Publishing
- conference name
- 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019
- conference location
- Saint Petersburg, Russian Federation
- conference dates
- 2019-04-22 - 2019-04-25
- external identifiers
-
- scopus:85078098420
- ISSN
- 1742-6588
- DOI
- 10.1088/1742-6596/1410/1/012058
- language
- English
- LU publication?
- yes
- id
- d797236d-db4a-4c37-9d38-1bcc01fcd7a6
- date added to LUP
- 2020-02-07 15:19:20
- date last changed
- 2023-10-08 00:47:47
@article{d797236d-db4a-4c37-9d38-1bcc01fcd7a6, abstract = {{<p>A model is developed to depict the formation of InP/Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>P axial heterostructures in self-catalyzed Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>P nanowires. The composition profiles of the InP/Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>P axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>P axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>As system is performed and reveals that the InP/Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>P axial heterojunction width is approximately two times smaller than the InAs/Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>As axial heterojunction width.</p>}}, author = {{Koryakin, A. A. and Leshchenko, E. D. and Dubrovskii, V. G.}}, issn = {{1742-6588}}, language = {{eng}}, number = {{1}}, publisher = {{IOP Publishing}}, series = {{Journal of Physics: Conference Series}}, title = {{Modeling the formation of InP/Ga<sub>x</sub>In<sub>1-x</sub>P axial nanowire heterostructures}}, url = {{http://dx.doi.org/10.1088/1742-6596/1410/1/012058}}, doi = {{10.1088/1742-6596/1410/1/012058}}, volume = {{1410}}, year = {{2019}}, }