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Modeling the formation of InP/GaxIn1-xP axial nanowire heterostructures

Koryakin, A. A. ; Leshchenko, E. D. LU and Dubrovskii, V. G. (2019) 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 In Journal of Physics: Conference Series 1410(1).
Abstract

A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is... (More)

A model is developed to depict the formation of InP/GaxIn1-xP axial heterostructures in self-catalyzed GaxIn1-xP nanowires. The composition profiles of the InP/GaxIn1-xP axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/GaxIn1-xP axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with GaxIn1-xAs system is performed and reveals that the InP/GaxIn1-xP axial heterojunction width is approximately two times smaller than the InAs/GaxIn1-xAs axial heterojunction width.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Journal of Physics: Conference Series
volume
1410
issue
1
article number
012058
publisher
IOP Publishing
conference name
6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019
conference location
Saint Petersburg, Russian Federation
conference dates
2019-04-22 - 2019-04-25
external identifiers
  • scopus:85078098420
ISSN
1742-6588
DOI
10.1088/1742-6596/1410/1/012058
language
English
LU publication?
yes
id
d797236d-db4a-4c37-9d38-1bcc01fcd7a6
date added to LUP
2020-02-07 15:19:20
date last changed
2023-10-08 00:47:47
@article{d797236d-db4a-4c37-9d38-1bcc01fcd7a6,
  abstract     = {{<p>A model is developed to depict the formation of InP/Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>P axial heterostructures in self-catalyzed Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>P nanowires. The composition profiles of the InP/Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>P axial heterostructure are calculated taking into account elastic stresses. It is shown that the InP/Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>P axial heterojunction width at the growth temperature of 450°C is larger than 12 monolayers for nanowires with the radius larger than 10 nm. Also, the comparison with Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>As system is performed and reveals that the InP/Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>P axial heterojunction width is approximately two times smaller than the InAs/Ga<sub>x</sub>In<sub>1</sub>-<sub>x</sub>As axial heterojunction width.</p>}},
  author       = {{Koryakin, A. A. and Leshchenko, E. D. and Dubrovskii, V. G.}},
  issn         = {{1742-6588}},
  language     = {{eng}},
  number       = {{1}},
  publisher    = {{IOP Publishing}},
  series       = {{Journal of Physics: Conference Series}},
  title        = {{Modeling the formation of InP/Ga<sub>x</sub>In<sub>1-x</sub>P axial nanowire heterostructures}},
  url          = {{http://dx.doi.org/10.1088/1742-6596/1410/1/012058}},
  doi          = {{10.1088/1742-6596/1410/1/012058}},
  volume       = {{1410}},
  year         = {{2019}},
}