Fabrication and Characterization of Ultra-Thin PIN Silicon Detectors for Counting the Passage of MeV Ions
(2013) In IEEE Transactions on Nuclear Science 60(2). p.1182-1188- Abstract
- This paper describes the fabrication and initial characterization of an ultra-thin silicon PIN detector using a new technique in silicon nanotechnology. In collaboration with the Nuclear Physics Division and the Lund Nano Lab at Lund University, we have developed and manufactured ultra thin Delta E-detectors for spectroscopic applications. The fabrication process has been carried out using a double-polished silicon substrate n-type wafer and locally thinning by means of a 10:1 solution of 25% tetramethyl ammonium hydroxide (TMAH) with Isopropyl alcohol. More than 100 detectors of different thicknesses, down to 5 mu m with active areas ranging from 0.71 to 0.172 mm(2), have been fabricated. The main design considerations of our thin... (More)
- This paper describes the fabrication and initial characterization of an ultra-thin silicon PIN detector using a new technique in silicon nanotechnology. In collaboration with the Nuclear Physics Division and the Lund Nano Lab at Lund University, we have developed and manufactured ultra thin Delta E-detectors for spectroscopic applications. The fabrication process has been carried out using a double-polished silicon substrate n-type wafer and locally thinning by means of a 10:1 solution of 25% tetramethyl ammonium hydroxide (TMAH) with Isopropyl alcohol. More than 100 detectors of different thicknesses, down to 5 mu m with active areas ranging from 0.71 to 0.172 mm(2), have been fabricated. The main design considerations of our thin detectors were a very low leakage current below 12 nA and a low full depletion voltage at a reverse bias less than 1.5 V. Finally, most of our thin detectors offer an energy resolution (FWHM) as low as 31 keV for 5.487 MeV alpha particles from a Am-241 source. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3979299
- author
- Abdel, Naseem ; Pallon, Jan LU ; Graczyk, Mariusz LU ; Maximov, Ivan LU and Wallman, Lars LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Energy resolution, leakage current, silicon nanotechnology, TMAH, etching, ultra-thin PIN detector
- in
- IEEE Transactions on Nuclear Science
- volume
- 60
- issue
- 2
- pages
- 1182 - 1188
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000320856500121
- scopus:84876287142
- ISSN
- 0018-9499
- DOI
- 10.1109/TNS.2012.2230644
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Nuclear Physics (Faculty of Technology) (011013007), Solid State Physics (011013006), Biomedical Engineering (011200011)
- id
- d8031fc5-b359-4012-804a-ff193b79f16c (old id 3979299)
- date added to LUP
- 2016-04-01 13:07:57
- date last changed
- 2023-09-02 19:24:58
@article{d8031fc5-b359-4012-804a-ff193b79f16c, abstract = {{This paper describes the fabrication and initial characterization of an ultra-thin silicon PIN detector using a new technique in silicon nanotechnology. In collaboration with the Nuclear Physics Division and the Lund Nano Lab at Lund University, we have developed and manufactured ultra thin Delta E-detectors for spectroscopic applications. The fabrication process has been carried out using a double-polished silicon substrate n-type wafer and locally thinning by means of a 10:1 solution of 25% tetramethyl ammonium hydroxide (TMAH) with Isopropyl alcohol. More than 100 detectors of different thicknesses, down to 5 mu m with active areas ranging from 0.71 to 0.172 mm(2), have been fabricated. The main design considerations of our thin detectors were a very low leakage current below 12 nA and a low full depletion voltage at a reverse bias less than 1.5 V. Finally, most of our thin detectors offer an energy resolution (FWHM) as low as 31 keV for 5.487 MeV alpha particles from a Am-241 source.}}, author = {{Abdel, Naseem and Pallon, Jan and Graczyk, Mariusz and Maximov, Ivan and Wallman, Lars}}, issn = {{0018-9499}}, keywords = {{Energy resolution; leakage current; silicon nanotechnology; TMAH; etching; ultra-thin PIN detector}}, language = {{eng}}, number = {{2}}, pages = {{1182--1188}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Transactions on Nuclear Science}}, title = {{Fabrication and Characterization of Ultra-Thin PIN Silicon Detectors for Counting the Passage of MeV Ions}}, url = {{http://dx.doi.org/10.1109/TNS.2012.2230644}}, doi = {{10.1109/TNS.2012.2230644}}, volume = {{60}}, year = {{2013}}, }