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Fabrication and Characterization of Ultra-Thin PIN Silicon Detectors for Counting the Passage of MeV Ions

Abdel, Naseem ; Pallon, Jan LU ; Graczyk, Mariusz LU ; Maximov, Ivan LU and Wallman, Lars LU (2013) In IEEE Transactions on Nuclear Science 60(2). p.1182-1188
Abstract
This paper describes the fabrication and initial characterization of an ultra-thin silicon PIN detector using a new technique in silicon nanotechnology. In collaboration with the Nuclear Physics Division and the Lund Nano Lab at Lund University, we have developed and manufactured ultra thin Delta E-detectors for spectroscopic applications. The fabrication process has been carried out using a double-polished silicon substrate n-type wafer and locally thinning by means of a 10:1 solution of 25% tetramethyl ammonium hydroxide (TMAH) with Isopropyl alcohol. More than 100 detectors of different thicknesses, down to 5 mu m with active areas ranging from 0.71 to 0.172 mm(2), have been fabricated. The main design considerations of our thin... (More)
This paper describes the fabrication and initial characterization of an ultra-thin silicon PIN detector using a new technique in silicon nanotechnology. In collaboration with the Nuclear Physics Division and the Lund Nano Lab at Lund University, we have developed and manufactured ultra thin Delta E-detectors for spectroscopic applications. The fabrication process has been carried out using a double-polished silicon substrate n-type wafer and locally thinning by means of a 10:1 solution of 25% tetramethyl ammonium hydroxide (TMAH) with Isopropyl alcohol. More than 100 detectors of different thicknesses, down to 5 mu m with active areas ranging from 0.71 to 0.172 mm(2), have been fabricated. The main design considerations of our thin detectors were a very low leakage current below 12 nA and a low full depletion voltage at a reverse bias less than 1.5 V. Finally, most of our thin detectors offer an energy resolution (FWHM) as low as 31 keV for 5.487 MeV alpha particles from a Am-241 source. (Less)
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author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Energy resolution, leakage current, silicon nanotechnology, TMAH, etching, ultra-thin PIN detector
in
IEEE Transactions on Nuclear Science
volume
60
issue
2
pages
1182 - 1188
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000320856500121
  • scopus:84876287142
ISSN
0018-9499
DOI
10.1109/TNS.2012.2230644
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Nuclear Physics (Faculty of Technology) (011013007), Solid State Physics (011013006), Biomedical Engineering (011200011)
id
d8031fc5-b359-4012-804a-ff193b79f16c (old id 3979299)
date added to LUP
2016-04-01 13:07:57
date last changed
2023-09-02 19:24:58
@article{d8031fc5-b359-4012-804a-ff193b79f16c,
  abstract     = {{This paper describes the fabrication and initial characterization of an ultra-thin silicon PIN detector using a new technique in silicon nanotechnology. In collaboration with the Nuclear Physics Division and the Lund Nano Lab at Lund University, we have developed and manufactured ultra thin Delta E-detectors for spectroscopic applications. The fabrication process has been carried out using a double-polished silicon substrate n-type wafer and locally thinning by means of a 10:1 solution of 25% tetramethyl ammonium hydroxide (TMAH) with Isopropyl alcohol. More than 100 detectors of different thicknesses, down to 5 mu m with active areas ranging from 0.71 to 0.172 mm(2), have been fabricated. The main design considerations of our thin detectors were a very low leakage current below 12 nA and a low full depletion voltage at a reverse bias less than 1.5 V. Finally, most of our thin detectors offer an energy resolution (FWHM) as low as 31 keV for 5.487 MeV alpha particles from a Am-241 source.}},
  author       = {{Abdel, Naseem and Pallon, Jan and Graczyk, Mariusz and Maximov, Ivan and Wallman, Lars}},
  issn         = {{0018-9499}},
  keywords     = {{Energy resolution; leakage current; silicon nanotechnology; TMAH; etching; ultra-thin PIN detector}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{1182--1188}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Nuclear Science}},
  title        = {{Fabrication and Characterization of Ultra-Thin PIN Silicon Detectors for Counting the Passage of MeV Ions}},
  url          = {{http://dx.doi.org/10.1109/TNS.2012.2230644}},
  doi          = {{10.1109/TNS.2012.2230644}},
  volume       = {{60}},
  year         = {{2013}},
}