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Elimination of Lateral Resistance and Current Crowding in Large-Area LEDs by Composition Grading and Diffusion-Driven Charge Transport

Kivisaari, Pyry LU ; Kim, Iurii ; Suihkonen, Sami and Oksanen, Jani (2017) In Advanced Electronic Materials 3(6).
Abstract

Gallium nitride based light-emitting diodes (LEDs) are presently fundamentally transforming the lighting industry, but limitations in the materials and fabrication methods of LEDs introduce substantial challenges to their future development. Among the remaining key bottlenecks of GaN LEDs are the resistive losses and current crowding that strongly increase the heat generation at high powers. In this work the authors show how a new design paradigm based on diffusion-driven charge transport (DDCT) and selective-area growth (SAG) of GaN can be used to reduce the resistive losses of LEDs below the level achievable with presently available structures. The authors carry out full device simulations and demonstrate SAG of both n- and p-doped... (More)

Gallium nitride based light-emitting diodes (LEDs) are presently fundamentally transforming the lighting industry, but limitations in the materials and fabrication methods of LEDs introduce substantial challenges to their future development. Among the remaining key bottlenecks of GaN LEDs are the resistive losses and current crowding that strongly increase the heat generation at high powers. In this work the authors show how a new design paradigm based on diffusion-driven charge transport (DDCT) and selective-area growth (SAG) of GaN can be used to reduce the resistive losses of LEDs below the level achievable with presently available structures. The authors carry out full device simulations and demonstrate SAG of both n- and p-doped GaN on device templates with InGaN quantum wells that can be excited using DDCT. The results indicate that especially when combined with material composition grading, the new approach offers the possibility to substantially reduce the resistive heating in high-power LEDs.

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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Charge spreading, Gallium nitride, Internal resistance, Light-emitting diodes
in
Advanced Electronic Materials
volume
3
issue
6
article number
1700103
publisher
John Wiley & Sons Inc.
external identifiers
  • wos:000403287500012
  • scopus:85018960828
ISSN
2199-160X
DOI
10.1002/aelm.201700103
language
English
LU publication?
yes
id
d905c268-56b2-4a7b-adc9-ee82554431f3
date added to LUP
2017-06-08 08:12:20
date last changed
2025-01-07 14:48:05
@article{d905c268-56b2-4a7b-adc9-ee82554431f3,
  abstract     = {{<p>Gallium nitride based light-emitting diodes (LEDs) are presently fundamentally transforming the lighting industry, but limitations in the materials and fabrication methods of LEDs introduce substantial challenges to their future development. Among the remaining key bottlenecks of GaN LEDs are the resistive losses and current crowding that strongly increase the heat generation at high powers. In this work the authors show how a new design paradigm based on diffusion-driven charge transport (DDCT) and selective-area growth (SAG) of GaN can be used to reduce the resistive losses of LEDs below the level achievable with presently available structures. The authors carry out full device simulations and demonstrate SAG of both n- and p-doped GaN on device templates with InGaN quantum wells that can be excited using DDCT. The results indicate that especially when combined with material composition grading, the new approach offers the possibility to substantially reduce the resistive heating in high-power LEDs.</p>}},
  author       = {{Kivisaari, Pyry and Kim, Iurii and Suihkonen, Sami and Oksanen, Jani}},
  issn         = {{2199-160X}},
  keywords     = {{Charge spreading; Gallium nitride; Internal resistance; Light-emitting diodes}},
  language     = {{eng}},
  number       = {{6}},
  publisher    = {{John Wiley & Sons Inc.}},
  series       = {{Advanced Electronic Materials}},
  title        = {{Elimination of Lateral Resistance and Current Crowding in Large-Area LEDs by Composition Grading and Diffusion-Driven Charge Transport}},
  url          = {{http://dx.doi.org/10.1002/aelm.201700103}},
  doi          = {{10.1002/aelm.201700103}},
  volume       = {{3}},
  year         = {{2017}},
}