Three-terminal ballistic junctions: New building blocks for functional devices in nanoelectronics
(2005) 2005 International Microprocesses and Nanotechnology Conference 2005. p.260-260- Abstract
- Present digital logic gates are primarily built from field effect transistors (FETs) such as complementary metal oxide semiconductors with the gate length in the deep sub-μm regime. As device feature sizes approach the nanometer regime, fundamental physical constraints and increasingly prohibitive economic costs will make further miniaturization in electronic circuits difficult, and this has motivated efforts worldwide to search for new strategies to meet expected computing demands of the future. In the strategy for device fabrication, bottom-up approaches to electronic devices with well-defined nanoscale building blocks have been demonstrated. An alternative strategy is to develop new device concepts by making a revolutionary departure... (More)
- Present digital logic gates are primarily built from field effect transistors (FETs) such as complementary metal oxide semiconductors with the gate length in the deep sub-μm regime. As device feature sizes approach the nanometer regime, fundamental physical constraints and increasingly prohibitive economic costs will make further miniaturization in electronic circuits difficult, and this has motivated efforts worldwide to search for new strategies to meet expected computing demands of the future. In the strategy for device fabrication, bottom-up approaches to electronic devices with well-defined nanoscale building blocks have been demonstrated. An alternative strategy is to develop new device concepts by making a revolutionary departure from the FET-based paradigm. The approach must exploit the emerging inherent properties of nanostructures. Here we report on a paradigm based on multi-terminal ballistic junctions (MBJs) [1-7], in which the ballistic nature of electron transport, which has emerged in the nanostructures, is exploited. A typical type of MBJ is the three-terminal ballistic junction (TBJ), a nanostructure- compatible device formed from three ballistically coupled nonlinear conductors such as quantum point contacts, realizable by standard nanofabrication methods. A key requirement in the realization of this type of devices is that carrier transport in the device is ballistic or quasi-ballistic. Various TBJ structures have been fabricated on high-quality semiconductor heterostructures and novel properties of TBJs have been found [1-6]. In particular, we demonstrate that TBJs can be used as diodes and triodes, as well as building blocks for logic circuits. These devices function at room temperature, and the device layout features fabrication by a single-step lithography process that is suitable for mass production with low-cost approaches such as nanoimprint lithography. Furthermore, the demonstrated device principles are expected to apply equally well to multi-terminal junctions made from, e.g., carbon nanotubes and semiconductor nanowires [8]. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/616278
- author
- Xu, Hongqi LU
- organization
- publishing date
- 2005
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Semiconductor nanowires, Multi terminal junctions, Terminal ballistic junction (TBJ), Nonlinear conductors
- host publication
- Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference
- volume
- 2005
- pages
- 260 - 260
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2005 International Microprocesses and Nanotechnology Conference
- conference location
- Tokyo, Japan
- conference dates
- 2005-10-25 - 2005-10-28
- external identifiers
-
- scopus:33847241904
- language
- English
- LU publication?
- yes
- id
- db9fb70d-a956-443d-a137-39028028f4a1 (old id 616278)
- alternative location
- http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1595313
- date added to LUP
- 2016-04-04 10:21:59
- date last changed
- 2022-01-29 20:09:57
@inproceedings{db9fb70d-a956-443d-a137-39028028f4a1,
abstract = {{Present digital logic gates are primarily built from field effect transistors (FETs) such as complementary metal oxide semiconductors with the gate length in the deep sub-μm regime. As device feature sizes approach the nanometer regime, fundamental physical constraints and increasingly prohibitive economic costs will make further miniaturization in electronic circuits difficult, and this has motivated efforts worldwide to search for new strategies to meet expected computing demands of the future. In the strategy for device fabrication, bottom-up approaches to electronic devices with well-defined nanoscale building blocks have been demonstrated. An alternative strategy is to develop new device concepts by making a revolutionary departure from the FET-based paradigm. The approach must exploit the emerging inherent properties of nanostructures. Here we report on a paradigm based on multi-terminal ballistic junctions (MBJs) [1-7], in which the ballistic nature of electron transport, which has emerged in the nanostructures, is exploited. A typical type of MBJ is the three-terminal ballistic junction (TBJ), a nanostructure- compatible device formed from three ballistically coupled nonlinear conductors such as quantum point contacts, realizable by standard nanofabrication methods. A key requirement in the realization of this type of devices is that carrier transport in the device is ballistic or quasi-ballistic. Various TBJ structures have been fabricated on high-quality semiconductor heterostructures and novel properties of TBJs have been found [1-6]. In particular, we demonstrate that TBJs can be used as diodes and triodes, as well as building blocks for logic circuits. These devices function at room temperature, and the device layout features fabrication by a single-step lithography process that is suitable for mass production with low-cost approaches such as nanoimprint lithography. Furthermore, the demonstrated device principles are expected to apply equally well to multi-terminal junctions made from, e.g., carbon nanotubes and semiconductor nanowires [8].}},
author = {{Xu, Hongqi}},
booktitle = {{Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference}},
keywords = {{Semiconductor nanowires; Multi terminal junctions; Terminal ballistic junction (TBJ); Nonlinear conductors}},
language = {{eng}},
pages = {{260--260}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
title = {{Three-terminal ballistic junctions: New building blocks for functional devices in nanoelectronics}},
url = {{http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1595313}},
volume = {{2005}},
year = {{2005}},
}