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Two-dimensional electron gas at wurtzite–zinc-blende InP interfaces induced by modulation doping

Geijselaers, Irene LU ; Lehmann, Sebastian LU ; Dick, Kimberly LU and Pistol, Mats-Erik LU (2020) In Applied Physics Letters 116.
Abstract
The quality, such as long-range correlation and mobility, of a two-dimensional electron gas (2DEG) is limited by, among other factors, interface roughness, which is inherent to the use of compositional heterostructures. Polytypic heterostructures have atomically sharp interfaces and minimal strain, decreasing the interface roughness, which may increase the mobility and long-range correlation of 2DEGs. In this work, we show the formation of a 2DEG at the wurtzite–zinc blende interface in partially n-type-doped InP nanowires using power-dependent photoluminescence. We additionally determined the wurtzite–zinc blende InP valence band offset to be 35 meV <DEv < 70 meV. Our results may enable the study of electron gases at interfaces,... (More)
The quality, such as long-range correlation and mobility, of a two-dimensional electron gas (2DEG) is limited by, among other factors, interface roughness, which is inherent to the use of compositional heterostructures. Polytypic heterostructures have atomically sharp interfaces and minimal strain, decreasing the interface roughness, which may increase the mobility and long-range correlation of 2DEGs. In this work, we show the formation of a 2DEG at the wurtzite–zinc blende interface in partially n-type-doped InP nanowires using power-dependent photoluminescence. We additionally determined the wurtzite–zinc blende InP valence band offset to be 35 meV <DEv < 70 meV. Our results may enable the study of electron gases at interfaces, which are atomically flat over large areas. (Less)
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
116
pages
5 pages
publisher
American Institute of Physics (AIP)
ISSN
0003-6951
DOI
10.1063/5.0009818
project
Optical studies of crystal phase heterostructures
language
English
LU publication?
yes
id
dca3a33f-0881-4ac6-98b3-800be64dd905
date added to LUP
2021-09-28 13:34:05
date last changed
2022-03-31 14:54:27
@article{dca3a33f-0881-4ac6-98b3-800be64dd905,
  abstract     = {{The quality, such as long-range correlation and mobility, of a two-dimensional electron gas (2DEG) is limited by, among other factors, interface roughness, which is inherent to the use of compositional heterostructures. Polytypic heterostructures have atomically sharp interfaces and minimal strain, decreasing the interface roughness, which may increase the mobility and long-range correlation of 2DEGs. In this work, we show the formation of a 2DEG at the wurtzite–zinc blende interface in partially n-type-doped InP nanowires using power-dependent photoluminescence. We additionally determined the wurtzite–zinc blende InP valence band offset to be 35 meV &lt;DEv &lt; 70 meV. Our results may enable the study of electron gases at interfaces, which are atomically flat over large areas.}},
  author       = {{Geijselaers, Irene and Lehmann, Sebastian and Dick, Kimberly and Pistol, Mats-Erik}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  month        = {{06}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Two-dimensional electron gas at wurtzite–zinc-blende InP interfaces induced by modulation doping}},
  url          = {{http://dx.doi.org/10.1063/5.0009818}},
  doi          = {{10.1063/5.0009818}},
  volume       = {{116}},
  year         = {{2020}},
}