Advanced

Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide

Liao, Gaohua; Luo, Ning; Chen, Ke Qiu and Xu, H. Q. LU (2016) In Scientific Reports 6.
Abstract

We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP) - a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the... (More)

We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP) - a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula.

(Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Scientific Reports
volume
6
publisher
Nature Publishing Group
external identifiers
  • scopus:84975463906
  • wos:000378106500001
ISSN
2045-2322
DOI
10.1038/srep28240
language
English
LU publication?
yes
id
dce18129-f400-4d92-af4e-45051fb473cd
date added to LUP
2017-01-23 08:36:16
date last changed
2017-10-08 04:57:25
@article{dce18129-f400-4d92-af4e-45051fb473cd,
  abstract     = {<p>We present a theoretical study of the electronic structures of freestanding nanowires made from gallium phosphide (GaP) - a III-V semiconductor with an indirect bulk bandgap. We consider [001]-oriented GaP nanowires with square and rectangular cross sections, and [111]-oriented GaP nanowires with hexagonal cross sections. Based on tight binding models, both the band structures and wave functions of the nanowires are calculated. For the [001]-oriented GaP nanowires, the bands show anti-crossing structures, while the bands of the [111]-oriented nanowires display crossing structures. Two minima are observed in the conduction bands, while the maximum of the valence bands is always at the Γ-point. Using double group theory, we analyze the symmetry properties of the lowest conduction band states and highest valence band states of GaP nanowires with different sizes and directions. The band state wave functions of the lowest conduction bands and the highest valence bands of the nanowires are evaluated by spatial probability distributions. For practical use, we fit the confinement energies of the electrons and holes in the nanowires to obtain an empirical formula.</p>},
  articleno    = {28240},
  author       = {Liao, Gaohua and Luo, Ning and Chen, Ke Qiu and Xu, H. Q.},
  issn         = {2045-2322},
  language     = {eng},
  month        = {06},
  publisher    = {Nature Publishing Group},
  series       = {Scientific Reports},
  title        = {Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide},
  url          = {http://dx.doi.org/10.1038/srep28240},
  volume       = {6},
  year         = {2016},
}