Schottky barrier and contact resistance of InSb nanowire field-effect transistors
(2016) In Nanotechnology 27(27).- Abstract
Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height is present at the metal-InSb NW interfaces and its effective height is gate-tunable. The contact resistance () in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that in the on-state... (More)
Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height is present at the metal-InSb NW interfaces and its effective height is gate-tunable. The contact resistance () in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that in the on-state exhibits a pronounced magnetic field-dependent feature, namely it is increased strongly with increasing magnetic field after an onset field . A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW-based nanoelectronic devices and quantum devices.
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- author
- Fan, Dingxun ; Kang, N. ; Ghalamestani, Sepideh Gorji LU ; Dick, Kimberly A. LU and Xu, H. Q. LU
- organization
- publishing date
- 2016-05-27
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- contact resistance, field-effect transistor, InSb, magnetotransport, Nanowire, Schottky barrier
- in
- Nanotechnology
- volume
- 27
- issue
- 27
- article number
- 275204
- publisher
- IOP Publishing
- external identifiers
-
- pmid:27232588
- wos:000377493700010
- scopus:84975085417
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/27/27/275204
- language
- English
- LU publication?
- yes
- id
- dd6b5334-7efd-49d7-a0b1-8aa6dc4c8df9
- date added to LUP
- 2017-01-27 11:13:47
- date last changed
- 2024-04-05 14:01:51
@article{dd6b5334-7efd-49d7-a0b1-8aa6dc4c8df9,
abstract = {{<p>Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height is present at the metal-InSb NW interfaces and its effective height is gate-tunable. The contact resistance () in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that in the on-state exhibits a pronounced magnetic field-dependent feature, namely it is increased strongly with increasing magnetic field after an onset field . A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW-based nanoelectronic devices and quantum devices.</p>}},
author = {{Fan, Dingxun and Kang, N. and Ghalamestani, Sepideh Gorji and Dick, Kimberly A. and Xu, H. Q.}},
issn = {{0957-4484}},
keywords = {{contact resistance; field-effect transistor; InSb; magnetotransport; Nanowire; Schottky barrier}},
language = {{eng}},
month = {{05}},
number = {{27}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Schottky barrier and contact resistance of InSb nanowire field-effect transistors}},
url = {{http://dx.doi.org/10.1088/0957-4484/27/27/275204}},
doi = {{10.1088/0957-4484/27/27/275204}},
volume = {{27}},
year = {{2016}},
}