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Schottky barrier and contact resistance of InSb nanowire field-effect transistors

Fan, Dingxun; Kang, N.; Ghalamestani, Sepideh Gorji LU ; Dick, Kimberly A. LU and Xu, H. Q. LU (2016) In Nanotechnology 27(27).
Abstract

Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height is present at the metal-InSb NW interfaces and its effective height is gate-tunable. The contact resistance () in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that in the on-state... (More)

Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height is present at the metal-InSb NW interfaces and its effective height is gate-tunable. The contact resistance () in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that in the on-state exhibits a pronounced magnetic field-dependent feature, namely it is increased strongly with increasing magnetic field after an onset field . A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW-based nanoelectronic devices and quantum devices.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
contact resistance, field-effect transistor, InSb, magnetotransport, Nanowire, Schottky barrier
in
Nanotechnology
volume
27
issue
27
publisher
IOP Publishing
external identifiers
  • scopus:84975085417
  • wos:000377493700010
ISSN
0957-4484
DOI
10.1088/0957-4484/27/27/275204
language
English
LU publication?
yes
id
dd6b5334-7efd-49d7-a0b1-8aa6dc4c8df9
date added to LUP
2017-01-27 11:13:47
date last changed
2017-09-18 11:34:30
@article{dd6b5334-7efd-49d7-a0b1-8aa6dc4c8df9,
  abstract     = {<p>Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height is present at the metal-InSb NW interfaces and its effective height is gate-tunable. The contact resistance () in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that in the on-state exhibits a pronounced magnetic field-dependent feature, namely it is increased strongly with increasing magnetic field after an onset field . A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide solid experimental evidence for the presence of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW-based nanoelectronic devices and quantum devices.</p>},
  articleno    = {275204},
  author       = {Fan, Dingxun and Kang, N. and Ghalamestani, Sepideh Gorji and Dick, Kimberly A. and Xu, H. Q.},
  issn         = {0957-4484},
  keyword      = {contact resistance,field-effect transistor,InSb,magnetotransport,Nanowire,Schottky barrier},
  language     = {eng},
  month        = {05},
  number       = {27},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Schottky barrier and contact resistance of InSb nanowire field-effect transistors},
  url          = {http://dx.doi.org/10.1088/0957-4484/27/27/275204},
  volume       = {27},
  year         = {2016},
}