A 1.6-2.6GHz 29dBm Injection-Locked Power Amplifier with 64% peak PAE in 65nm CMOS
Lindstrand, Jonas LU ; Bryant, Carl LU ; Törmänen, Markus LU
and Sjöland, Henrik
LU
(2011)
IEEE European Solid State Circuits Conference, ESSCIRC 2011
p.299-302
- Abstract
- This paper presents a wideband CMOS power
amplifier intended for cellular handset applications. The circuit
exploits injection locking to achieve a power gain of 20.5dB from
a single stage amplifier. The maximum output power of 29dBm,
with a peak drain- and power-added-efficiency (PAE) of 66%
and 64%, respectively, occurs at a center frequency of 2GHz
with a 3V supply. A cross-coupled cascode topology enables a
wideband PAE exceeding 50% from 1.6 to 2.6GHz. For output
power levels below 4dBm the circuit operates as a linear class
AB amplifier with a power consumption of 17mW from a 0.48V
supply. The power gain of 20.5dB is kept constant for all... (More) - This paper presents a wideband CMOS power
amplifier intended for cellular handset applications. The circuit
exploits injection locking to achieve a power gain of 20.5dB from
a single stage amplifier. The maximum output power of 29dBm,
with a peak drain- and power-added-efficiency (PAE) of 66%
and 64%, respectively, occurs at a center frequency of 2GHz
with a 3V supply. A cross-coupled cascode topology enables a
wideband PAE exceeding 50% from 1.6 to 2.6GHz. For output
power levels below 4dBm the circuit operates as a linear class
AB amplifier with a power consumption of 17mW from a 0.48V
supply. The power gain of 20.5dB is kept constant for all output
powers; with an AM-AM- and AM-PM-conversion of 0.2dB and
17deg, respectively, over the entire WCDMA dynamic range of
80dB. The circuit is implemented in a standard 65nm CMOS
process with a total chip area of 0.52x0.48mm2 including pads. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1973815
- author
- Lindstrand, Jonas
LU
; Bryant, Carl
LU
; Törmänen, Markus
LU
and Sjöland, Henrik
LU
- organization
- publishing date
- 2011
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Power efficiency, Poweramplifier, Injection lock, CMOS, Hybrid EER
- host publication
- Proc. IEEE European Solid State Circuits Conference
- pages
- 4 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- IEEE European Solid State Circuits Conference, ESSCIRC 2011
- conference location
- Helsinki, Finland
- conference dates
- 2011-09-12 - 2011-09-16
- external identifiers
-
- scopus:82955241343
- ISSN
- 1930-8833
- language
- English
- LU publication?
- yes
- id
- de701b66-f638-4e8b-98b9-81b14e5ca82f (old id 1973815)
- date added to LUP
- 2016-04-01 13:07:16
- date last changed
- 2024-01-09 07:51:32
@inproceedings{de701b66-f638-4e8b-98b9-81b14e5ca82f,
abstract = {{This paper presents a wideband CMOS power<br/><br>
amplifier intended for cellular handset applications. The circuit<br/><br>
exploits injection locking to achieve a power gain of 20.5dB from<br/><br>
a single stage amplifier. The maximum output power of 29dBm,<br/><br>
with a peak drain- and power-added-efficiency (PAE) of 66%<br/><br>
and 64%, respectively, occurs at a center frequency of 2GHz<br/><br>
with a 3V supply. A cross-coupled cascode topology enables a<br/><br>
wideband PAE exceeding 50% from 1.6 to 2.6GHz. For output<br/><br>
power levels below 4dBm the circuit operates as a linear class<br/><br>
AB amplifier with a power consumption of 17mW from a 0.48V<br/><br>
supply. The power gain of 20.5dB is kept constant for all output<br/><br>
powers; with an AM-AM- and AM-PM-conversion of 0.2dB and<br/><br>
17deg, respectively, over the entire WCDMA dynamic range of<br/><br>
80dB. The circuit is implemented in a standard 65nm CMOS<br/><br>
process with a total chip area of 0.52x0.48mm2 including pads.}},
author = {{Lindstrand, Jonas and Bryant, Carl and Törmänen, Markus and Sjöland, Henrik}},
booktitle = {{Proc. IEEE European Solid State Circuits Conference}},
issn = {{1930-8833}},
keywords = {{Power efficiency; Poweramplifier; Injection lock; CMOS; Hybrid EER}},
language = {{eng}},
pages = {{299--302}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
title = {{A 1.6-2.6GHz 29dBm Injection-Locked Power Amplifier with 64% peak PAE in 65nm CMOS}},
year = {{2011}},
}