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Creation and Annihilation of Nonradiative Recombination Centers in Polycrystalline Metal Halide Perovskites by Alternating Electric Field and Light

Chen, Ruiyun LU ; Li, Jun LU orcid ; Dobrovolsky, Alexander LU ; González-Carrero, Soranyel ; Gerhard, Marina LU ; Messing, Maria E. LU ; Chirvony, Vladimir ; Pérez-Prieto, Julia and Scheblykin, Ivan G. LU orcid (2020) In Advanced Optical Materials 8(4).
Abstract

Metal halide perovskites are promising optoelectronic materials. Their electronic properties however are rather unstable which is often assigned to ion migration. Ion migration can be readily influenced by an electric field (EF). Here, the response of photoluminescence (PL) of individual MAPbX3 (MA = CH3NH3, X = I, Br) sub-micrometer-sized polycrystals to EF is studied. Alternating EF with frequency higher than 10 Hz is found to reversibly quench PL. It is proposed that an alternating EF when applied together with light increases ion migration. This leads to a shift in the equilibrium between creation and annihilation of defects toward higher concentration of nonradiative recombination centers. The PL... (More)

Metal halide perovskites are promising optoelectronic materials. Their electronic properties however are rather unstable which is often assigned to ion migration. Ion migration can be readily influenced by an electric field (EF). Here, the response of photoluminescence (PL) of individual MAPbX3 (MA = CH3NH3, X = I, Br) sub-micrometer-sized polycrystals to EF is studied. Alternating EF with frequency higher than 10 Hz is found to reversibly quench PL. It is proposed that an alternating EF when applied together with light increases ion migration. This leads to a shift in the equilibrium between creation and annihilation of defects toward higher concentration of nonradiative recombination centers. The PL quenching is found to increase with increasing frequency of the field. This can be rationalized by the frequency dependence of the dielectric constant, leading to stronger internal fields for high modulation frequencies compared to, e.g., a constant EF with the same external amplitude. PL quenching and enhancement observed under constant EF are hypothesized to be due to a reconfiguration of already existing nonradiative recombination centers situated on grain boundaries. The control of perovskite PL by alternating EF reported here can find applications in optoelectronic devices.

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author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
electric field, ion migration, metal halide perovskites, nonradiative recombination, photoluminescence
in
Advanced Optical Materials
volume
8
issue
4
article number
1901642
publisher
John Wiley & Sons Inc.
external identifiers
  • scopus:85076346815
ISSN
2195-1071
DOI
10.1002/adom.201901642
language
English
LU publication?
yes
id
e0d1ad6c-a833-4da2-a543-f65047b3ee39
date added to LUP
2021-01-13 12:05:34
date last changed
2023-11-20 20:38:12
@article{e0d1ad6c-a833-4da2-a543-f65047b3ee39,
  abstract     = {{<p>Metal halide perovskites are promising optoelectronic materials. Their electronic properties however are rather unstable which is often assigned to ion migration. Ion migration can be readily influenced by an electric field (EF). Here, the response of photoluminescence (PL) of individual MAPbX<sub>3</sub> (MA = CH<sub>3</sub>NH<sub>3</sub>, X = I, Br) sub-micrometer-sized polycrystals to EF is studied. Alternating EF with frequency higher than 10 Hz is found to reversibly quench PL. It is proposed that an alternating EF when applied together with light increases ion migration. This leads to a shift in the equilibrium between creation and annihilation of defects toward higher concentration of nonradiative recombination centers. The PL quenching is found to increase with increasing frequency of the field. This can be rationalized by the frequency dependence of the dielectric constant, leading to stronger internal fields for high modulation frequencies compared to, e.g., a constant EF with the same external amplitude. PL quenching and enhancement observed under constant EF are hypothesized to be due to a reconfiguration of already existing nonradiative recombination centers situated on grain boundaries. The control of perovskite PL by alternating EF reported here can find applications in optoelectronic devices.</p>}},
  author       = {{Chen, Ruiyun and Li, Jun and Dobrovolsky, Alexander and González-Carrero, Soranyel and Gerhard, Marina and Messing, Maria E. and Chirvony, Vladimir and Pérez-Prieto, Julia and Scheblykin, Ivan G.}},
  issn         = {{2195-1071}},
  keywords     = {{electric field; ion migration; metal halide perovskites; nonradiative recombination; photoluminescence}},
  language     = {{eng}},
  number       = {{4}},
  publisher    = {{John Wiley & Sons Inc.}},
  series       = {{Advanced Optical Materials}},
  title        = {{Creation and Annihilation of Nonradiative Recombination Centers in Polycrystalline Metal Halide Perovskites by Alternating Electric Field and Light}},
  url          = {{http://dx.doi.org/10.1002/adom.201901642}},
  doi          = {{10.1002/adom.201901642}},
  volume       = {{8}},
  year         = {{2020}},
}