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Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity

MacLellan, D. A. ; Carroll, D. C. ; Gray, R. J. ; Booth, N. ; Burza, Matthias LU ; Desjarlais, M. P. ; Du, F. ; Gonzalez-Izquierdo, B. ; Neely, D. and Powell, H. W. , et al. (2013) In Physical Review Letters 111(9).
Abstract
Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review Letters
volume
111
issue
9
article number
095001
publisher
American Physical Society
external identifiers
  • wos:000323715500006
  • scopus:84884244114
  • pmid:24033041
ISSN
1079-7114
DOI
10.1103/PhysRevLett.111.095001
language
English
LU publication?
yes
id
e15d94b1-ba0a-4c8f-857e-4ae908e1cae1 (old id 4062914)
date added to LUP
2016-04-01 10:45:32
date last changed
2022-04-28 01:12:15
@article{e15d94b1-ba0a-4c8f-857e-4ae908e1cae1,
  abstract     = {{Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.}},
  author       = {{MacLellan, D. A. and Carroll, D. C. and Gray, R. J. and Booth, N. and Burza, Matthias and Desjarlais, M. P. and Du, F. and Gonzalez-Izquierdo, B. and Neely, D. and Powell, H. W. and Robinson, A. P. L. and Rusby, D. R. and Scott, G. G. and Yuan, X. H. and Wahlström, Claes-Göran and McKenna, P.}},
  issn         = {{1079-7114}},
  language     = {{eng}},
  number       = {{9}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review Letters}},
  title        = {{Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity}},
  url          = {{http://dx.doi.org/10.1103/PhysRevLett.111.095001}},
  doi          = {{10.1103/PhysRevLett.111.095001}},
  volume       = {{111}},
  year         = {{2013}},
}