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Variation of the conduction band edge of (Lu,Gd) 3 (Ga,Al) 5 O 12 :Ce garnets studied by thermally stimulated luminescence

Khanin, V. ; Venevtsev, I. ; Chernenko, K. LU ; Rodnyi, P. ; van Swieten, T. ; Spoor, S. ; Boerekamp, J. ; Wieczorek, H. ; Vrubel, I. and Meijerink, A. , et al. (2019) In Journal of Luminescence 211. p.48-53
Abstract


The shift of the conduction band (CB) edge for thirty different (Lu,Gd)
3
(Ga,Al)
5
O
12
:Ce compositions, with simultaneous variation in Lu/Gd and Ga/Al content was studied using thermally stimulated luminescence (TSL). Specific TSL peaks were related to impurities of Ta, Cr, Yb, Ti... (More)


The shift of the conduction band (CB) edge for thirty different (Lu,Gd)
3
(Ga,Al)
5
O
12
:Ce compositions, with simultaneous variation in Lu/Gd and Ga/Al content was studied using thermally stimulated luminescence (TSL). Specific TSL peaks were related to impurities of Ta, Cr, Yb, Ti and Eu in Lu
1
Gd
2
Ga
3
Al
2
O
12
:Ce ceramics. The shift of Yb-related peak positions (in temperature and trap depth) with composition modification was investigated as well. In Gd-containing (Lu,Gd)
3
(Ga,Al)
5
O
12
compositions a non-monotonous shift of the CB edge with increasing Ga content has been affirmed. The difference between thermal trap depths evaluated from our TSL experiments and optical trap depths obtained from the literature was explained by the role of lattice relaxation.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Complex garnets, Impurity-related traps, Thermal trap depth, Thermally stimulated luminescence
in
Journal of Luminescence
volume
211
pages
6 pages
publisher
Elsevier
external identifiers
  • scopus:85062717892
ISSN
0022-2313
DOI
10.1016/j.jlumin.2019.03.013
language
English
LU publication?
yes
id
e5657de0-510f-46cc-aa22-b27940987ee9
date added to LUP
2019-03-19 08:43:28
date last changed
2022-03-25 08:59:10
@article{e5657de0-510f-46cc-aa22-b27940987ee9,
  abstract     = {{<p><br>
                                                         The shift of the conduction band (CB) edge for thirty different (Lu,Gd)                             <br>
                            <sub>3</sub><br>
                                                         (Ga,Al)                             <br>
                            <sub>5</sub><br>
                                                         O                             <br>
                            <sub>12</sub><br>
                                                         :Ce compositions, with simultaneous variation in Lu/Gd and Ga/Al content was studied using thermally stimulated luminescence (TSL). Specific TSL peaks were related to impurities of Ta, Cr, Yb, Ti and Eu in Lu                             <br>
                            <sub>1</sub><br>
                                                         Gd                             <br>
                            <sub>2</sub><br>
                                                         Ga                             <br>
                            <sub>3</sub><br>
                                                         Al                             <br>
                            <sub>2</sub><br>
                                                         O                             <br>
                            <sub>12</sub><br>
                                                         :Ce ceramics. The shift of Yb-related peak positions (in temperature and trap depth) with composition modification was investigated as well. In Gd-containing (Lu,Gd)                             <br>
                            <sub>3</sub><br>
                                                         (Ga,Al)                             <br>
                            <sub>5</sub><br>
                                                         O                             <br>
                            <sub>12</sub><br>
                                                          compositions a non-monotonous shift of the CB edge with increasing Ga content has been affirmed. The difference between thermal trap depths evaluated from our TSL experiments and optical trap depths obtained from the literature was explained by the role of lattice relaxation.                         <br>
                        </p>}},
  author       = {{Khanin, V. and Venevtsev, I. and Chernenko, K. and Rodnyi, P. and van Swieten, T. and Spoor, S. and Boerekamp, J. and Wieczorek, H. and Vrubel, I. and Meijerink, A. and Ronda, C.}},
  issn         = {{0022-2313}},
  keywords     = {{Complex garnets; Impurity-related traps; Thermal trap depth; Thermally stimulated luminescence}},
  language     = {{eng}},
  pages        = {{48--53}},
  publisher    = {{Elsevier}},
  series       = {{Journal of Luminescence}},
  title        = {{Variation of the conduction band edge of (Lu,Gd)                         
                        <sub>3</sub>
                                                 (Ga,Al)                         
                        <sub>5</sub>
                                                 O                         
                        <sub>12</sub>
                                                 :Ce garnets studied by thermally stimulated luminescence}},
  url          = {{http://dx.doi.org/10.1016/j.jlumin.2019.03.013}},
  doi          = {{10.1016/j.jlumin.2019.03.013}},
  volume       = {{211}},
  year         = {{2019}},
}