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Low Temperature Synthesis of Stable γ-CsPbI 3 Perovskite Layers for Solar Cells Obtained by High Throughput Experimentation

Becker, Pascal ; Márquez, José A. ; Just, Justus LU orcid ; Al-Ashouri, Amran ; Hages, Charles ; Hempel, Hannes ; Jošt, Marko ; Albrecht, Steve ; Frahm, Ronald and Unold, Thomas (2019) In Advanced Energy Materials 9(22).
Abstract


The structural phases and optoelectronic properties of coevaporated CsPbI
3
thin films with a wide range of [CsI]/[PbI
2
] compositional ratios are investigated using high throughput experimentation and gradient samples. It is found that for CsI-rich growth conditions, CsPbI
3
can... (More)


The structural phases and optoelectronic properties of coevaporated CsPbI
3
thin films with a wide range of [CsI]/[PbI
2
] compositional ratios are investigated using high throughput experimentation and gradient samples. It is found that for CsI-rich growth conditions, CsPbI
3
can be synthesized directly at low temperature into the distorted perovskite γ-CsPbI
3
phase without detectable secondary phases. In contrast, PbI
2
-rich growth conditions are found to lead to the non-perovskite δ-phase. Photoluminescence spectroscopy and optical-pump THz-probe mapping show carrier lifetimes larger than 75 ns and charge carrier (sum) mobilities larger than 60 cm
2
V
−1
s
−1
for the γ-phase, indicating their suitability for high efficiency solar cells. The dependence of the carrier mobilities and luminescence peak energy on the Cs-content in the films indicates the presence of Schottky defect pairs, which may cause the stabilization of the γ-phase. Building on these results, p–i–n type solar cells with a maximum efficiency exceeding 12% and high shelf stability of more than 1200 h are demonstrated, which in the future could still be significantly improved, judging on their bulk optoelectronic properties.

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Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
coevaporation, high throughput characterization, inorganic halide perovskites, optoelectronics, thin film solar cells
in
Advanced Energy Materials
volume
9
issue
22
article number
1900555
publisher
Wiley-Blackwell
external identifiers
  • scopus:85065047621
ISSN
1614-6832
DOI
10.1002/aenm.201900555
language
English
LU publication?
yes
id
e6924408-8f81-402b-8e4b-da2ade7c08af
date added to LUP
2019-05-17 13:55:49
date last changed
2025-10-14 09:08:13
@article{e6924408-8f81-402b-8e4b-da2ade7c08af,
  abstract     = {{<p><br>
                                                         The structural phases and optoelectronic properties of coevaporated CsPbI                             <br>
                            <sub>3</sub><br>
                                                          thin films with a wide range of [CsI]/[PbI                             <br>
                            <sub>2</sub><br>
                                                         ] compositional ratios are investigated using high throughput experimentation and gradient samples. It is found that for CsI-rich growth conditions, CsPbI                             <br>
                            <sub>3</sub><br>
                                                          can be synthesized directly at low temperature into the distorted perovskite γ-CsPbI                             <br>
                            <sub>3</sub><br>
                                                          phase without detectable secondary phases. In contrast, PbI                             <br>
                            <sub>2</sub><br>
                                                         -rich growth conditions are found to lead to the non-perovskite δ-phase. Photoluminescence spectroscopy and optical-pump THz-probe mapping show carrier lifetimes larger than 75 ns and charge carrier (sum) mobilities larger than 60 cm                             <br>
                            <sup>2</sup><br>
                                                          V                             <br>
                            <sup>−1</sup><br>
                                                          s                             <br>
                            <sup>−1</sup><br>
                                                          for the γ-phase, indicating their suitability for high efficiency solar cells. The dependence of the carrier mobilities and luminescence peak energy on the Cs-content in the films indicates the presence of Schottky defect pairs, which may cause the stabilization of the γ-phase. Building on these results, p–i–n type solar cells with a maximum efficiency exceeding 12% and high shelf stability of more than 1200 h are demonstrated, which in the future could still be significantly improved, judging on their bulk optoelectronic properties.                         <br>
                        </p>}},
  author       = {{Becker, Pascal and Márquez, José A. and Just, Justus and Al-Ashouri, Amran and Hages, Charles and Hempel, Hannes and Jošt, Marko and Albrecht, Steve and Frahm, Ronald and Unold, Thomas}},
  issn         = {{1614-6832}},
  keywords     = {{coevaporation; high throughput characterization; inorganic halide perovskites; optoelectronics; thin film solar cells}},
  language     = {{eng}},
  number       = {{22}},
  publisher    = {{Wiley-Blackwell}},
  series       = {{Advanced Energy Materials}},
  title        = {{Low Temperature Synthesis of Stable γ-CsPbI                         
                        <sub>3</sub>
                                                  Perovskite Layers for Solar Cells Obtained by High Throughput Experimentation}},
  url          = {{http://dx.doi.org/10.1002/aenm.201900555}},
  doi          = {{10.1002/aenm.201900555}},
  volume       = {{9}},
  year         = {{2019}},
}