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Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Glaser, Markus; Kitzler, Andreas; Johannes, Andreas; Prucnal, Slawomir; Potts, Heidi LU ; Conesa-Boj, Sonia; Filipovic, Lidija; Kosina, Hans; Skorupa, Wolfgang and Bertagnolli, Emmerich, et al. (2016) In Nano Letters 16(6). p.13-3507
Abstract

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in... (More)

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes.

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publication status
published
in
Nano Letters
volume
16
issue
6
pages
7 pages
publisher
The American Chemical Society
external identifiers
  • scopus:84974802632
ISSN
1530-6992
DOI
10.1021/acs.nanolett.6b00315
language
English
LU publication?
no
id
e6de0f2e-e1da-4dab-ba59-66ee2758109f
date added to LUP
2019-05-15 09:53:31
date last changed
2019-08-11 04:48:27
@article{e6de0f2e-e1da-4dab-ba59-66ee2758109f,
  abstract     = {<p>In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes.</p>},
  author       = {Glaser, Markus and Kitzler, Andreas and Johannes, Andreas and Prucnal, Slawomir and Potts, Heidi and Conesa-Boj, Sonia and Filipovic, Lidija and Kosina, Hans and Skorupa, Wolfgang and Bertagnolli, Emmerich and Ronning, Carsten and Fontcuberta I Morral, Anna and Lugstein, Alois},
  issn         = {1530-6992},
  language     = {eng},
  month        = {06},
  number       = {6},
  pages        = {13--3507},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.6b00315},
  volume       = {16},
  year         = {2016},
}