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Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching

Naureen, S. ; Shahid, N. ; Gustafsson, Anders LU orcid ; Liuolia, V. ; Marcinkevicius, S. and Anand, S. (2013) In Applied Physics Letters 102(21).
Abstract
We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (mu-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provided beneath the 1 mu m tall NPs functions as a "detector" in CL for monitoring carrier diffusion in InP NP. Carrier feeding to the InGaAs layer indicated by a double exponential PL decay is confirmed through CL mapping. Carrier lifetimes of over 1 ns and the appreciably long diffusion lengths (400-700 nm) in the InP NPs indicate very low surface damage making them attractive for optoelectronic applications. (C) 2013 AIP Publishing LLC.
Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
102
issue
21
article number
212106
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000320620400037
  • scopus:84879115969
ISSN
0003-6951
DOI
10.1063/1.4808447
language
English
LU publication?
yes
id
e89f24c8-1062-4e0d-b6ac-23e95b3dd09f (old id 3979917)
date added to LUP
2016-04-01 11:03:21
date last changed
2023-08-31 17:39:28
@article{e89f24c8-1062-4e0d-b6ac-23e95b3dd09f,
  abstract     = {{We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (mu-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provided beneath the 1 mu m tall NPs functions as a "detector" in CL for monitoring carrier diffusion in InP NP. Carrier feeding to the InGaAs layer indicated by a double exponential PL decay is confirmed through CL mapping. Carrier lifetimes of over 1 ns and the appreciably long diffusion lengths (400-700 nm) in the InP NPs indicate very low surface damage making them attractive for optoelectronic applications. (C) 2013 AIP Publishing LLC.}},
  author       = {{Naureen, S. and Shahid, N. and Gustafsson, Anders and Liuolia, V. and Marcinkevicius, S. and Anand, S.}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{21}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching}},
  url          = {{http://dx.doi.org/10.1063/1.4808447}},
  doi          = {{10.1063/1.4808447}},
  volume       = {{102}},
  year         = {{2013}},
}