Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching
(2013) In Applied Physics Letters 102(21).- Abstract
- We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (mu-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provided beneath the 1 mu m tall NPs functions as a "detector" in CL for monitoring carrier diffusion in InP NP. Carrier feeding to the InGaAs layer indicated by a double exponential PL decay is confirmed through CL mapping. Carrier lifetimes of over 1 ns and the appreciably long diffusion lengths (400-700 nm) in the InP NPs indicate very low surface damage making them attractive for optoelectronic applications. (C) 2013 AIP Publishing LLC.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3979917
- author
- Naureen, S. ; Shahid, N. ; Gustafsson, Anders LU ; Liuolia, V. ; Marcinkevicius, S. and Anand, S.
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 102
- issue
- 21
- article number
- 212106
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000320620400037
- scopus:84879115969
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4808447
- language
- English
- LU publication?
- yes
- id
- e89f24c8-1062-4e0d-b6ac-23e95b3dd09f (old id 3979917)
- date added to LUP
- 2016-04-01 11:03:21
- date last changed
- 2023-08-31 17:39:28
@article{e89f24c8-1062-4e0d-b6ac-23e95b3dd09f, abstract = {{We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (mu-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provided beneath the 1 mu m tall NPs functions as a "detector" in CL for monitoring carrier diffusion in InP NP. Carrier feeding to the InGaAs layer indicated by a double exponential PL decay is confirmed through CL mapping. Carrier lifetimes of over 1 ns and the appreciably long diffusion lengths (400-700 nm) in the InP NPs indicate very low surface damage making them attractive for optoelectronic applications. (C) 2013 AIP Publishing LLC.}}, author = {{Naureen, S. and Shahid, N. and Gustafsson, Anders and Liuolia, V. and Marcinkevicius, S. and Anand, S.}}, issn = {{0003-6951}}, language = {{eng}}, number = {{21}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching}}, url = {{http://dx.doi.org/10.1063/1.4808447}}, doi = {{10.1063/1.4808447}}, volume = {{102}}, year = {{2013}}, }