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Gold-free growth of GaAs nanowires on silicon: arrays and polytypism

Plissard, Sebastien ; Dick Thelander, Kimberly LU ; Larrieu, Guilhem ; Godey, Sylvie ; Addad, Ahmed ; Wallart, Xavier and Caroff, Philippe (2010) In Nanotechnology 21(38).
Abstract
We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.
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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
21
issue
38
article number
385602
publisher
IOP Publishing
external identifiers
  • wos:000281398700011
  • scopus:77958561366
  • pmid:20798467
ISSN
0957-4484
DOI
10.1088/0957-4484/21/38/385602
language
English
LU publication?
yes
id
e8db2338-4d04-4926-a395-c04a3c595d2b (old id 1672303)
date added to LUP
2016-04-01 10:23:21
date last changed
2023-11-09 19:39:53
@article{e8db2338-4d04-4926-a395-c04a3c595d2b,
  abstract     = {{We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.}},
  author       = {{Plissard, Sebastien and Dick Thelander, Kimberly and Larrieu, Guilhem and Godey, Sylvie and Addad, Ahmed and Wallart, Xavier and Caroff, Philippe}},
  issn         = {{0957-4484}},
  language     = {{eng}},
  number       = {{38}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Gold-free growth of GaAs nanowires on silicon: arrays and polytypism}},
  url          = {{http://dx.doi.org/10.1088/0957-4484/21/38/385602}},
  doi          = {{10.1088/0957-4484/21/38/385602}},
  volume       = {{21}},
  year         = {{2010}},
}