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Improved breakdown voltages for type I InP/InGaAs DHBTs

Lind, Erik LU ; Griffith, Zach and Rodwell, Mark J. W. (2008) 20th International Conference on Indium Phosphide and Related Materials p.504-507
Abstract
We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades.
Please use this url to cite or link to this publication:
author
; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
InP heterojunction bipolar transistor
host publication
20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008
pages
504 - 507
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
20th International Conference on Indium Phosphide and Related Materials
conference location
Versailles, France
conference dates
2008-05-25 - 2008-05-29
external identifiers
  • wos:000267695700142
  • scopus:70149100468
ISSN
1092-8669
DOI
10.1109/ICIPRM.2008.4703033
language
English
LU publication?
yes
id
e92fc757-61a4-4bee-a57c-de189afc671d (old id 1463541)
date added to LUP
2016-04-01 13:54:25
date last changed
2022-01-27 21:49:13
@inproceedings{e92fc757-61a4-4bee-a57c-de189afc671d,
  abstract     = {{We have investigated the base-collector breakdown voltage of type I InGaAs/InP DHBTs, which is shown to be dominated by band-to-band tunneling in the base-collector grade. By optimizing the grade we obtain a 20% increase in the breakdown voltage compared with traditional grades.}},
  author       = {{Lind, Erik and Griffith, Zach and Rodwell, Mark J. W.}},
  booktitle    = {{20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008}},
  issn         = {{1092-8669}},
  keywords     = {{InP heterojunction bipolar transistor}},
  language     = {{eng}},
  pages        = {{504--507}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{Improved breakdown voltages for type I InP/InGaAs DHBTs}},
  url          = {{http://dx.doi.org/10.1109/ICIPRM.2008.4703033}},
  doi          = {{10.1109/ICIPRM.2008.4703033}},
  year         = {{2008}},
}