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Understanding GaAs Nanowire Growth in the Ag-Au Seed Materials System

Mårtensson, Erik K. LU ; Whiticar, Alexander M. ; De La Mata, Maria LU ; Zamani, Reza R. LU ; Johansson, Jonas LU orcid ; Nygård, Jesper ; Dick, Kimberly A. LU and Bolinsson, Jessica LU (2018) In Crystal Growth and Design p.6702-6712
Abstract

The integration of III-V semiconductors with Si in device fabrication is facilitated by the use of nanoscale structures such as nanowires. Nanowires are predominantly grown using Au seed particles; however, the seed material is known to affect the nanowire growth and properties. Here we present growth of GaAs nanowires using three different seed particle materials: Au, Ag, and a AgAu alloy. By comparing the results from the different seeds, we found that the growths of Au- and AgAu-seeded nanowires were in general very similar, with homogeneous and vertical nanowires observed in both cases. The Ag-seeded growths instead revealed a lower yield of vertical nanowires with large variations in lengths. Different Ga-concentrations were... (More)

The integration of III-V semiconductors with Si in device fabrication is facilitated by the use of nanoscale structures such as nanowires. Nanowires are predominantly grown using Au seed particles; however, the seed material is known to affect the nanowire growth and properties. Here we present growth of GaAs nanowires using three different seed particle materials: Au, Ag, and a AgAu alloy. By comparing the results from the different seeds, we found that the growths of Au- and AgAu-seeded nanowires were in general very similar, with homogeneous and vertical nanowires observed in both cases. The Ag-seeded growths instead revealed a lower yield of vertical nanowires with large variations in lengths. Different Ga-concentrations were measured in the different seed particles, which suggested that the Au and the AgAu seed particles were liquid during growth, whereas Ag particles were solid. The chemical potential of Ga was however found to be similar for all three seed materials. We propose that the Ga concentrations are determined by the chemical potential of Ga, which in turn explains why Ag-seeded nanowire growth proceeds with a solid particle. Overall, this study shows that varying the seed material can be a powerful tool to gain a deeper understanding of particle assisted nanowire growth.

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publishing date
type
Contribution to journal
publication status
published
subject
in
Crystal Growth and Design
pages
6702 - 6712
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85054805732
ISSN
1528-7483
DOI
10.1021/acs.cgd.8b00949
language
English
LU publication?
yes
id
eb897454-e863-4233-aafd-f3ebc152a1e6
date added to LUP
2018-11-09 12:26:50
date last changed
2021-09-29 03:38:00
@article{eb897454-e863-4233-aafd-f3ebc152a1e6,
  abstract     = {<p>The integration of III-V semiconductors with Si in device fabrication is facilitated by the use of nanoscale structures such as nanowires. Nanowires are predominantly grown using Au seed particles; however, the seed material is known to affect the nanowire growth and properties. Here we present growth of GaAs nanowires using three different seed particle materials: Au, Ag, and a AgAu alloy. By comparing the results from the different seeds, we found that the growths of Au- and AgAu-seeded nanowires were in general very similar, with homogeneous and vertical nanowires observed in both cases. The Ag-seeded growths instead revealed a lower yield of vertical nanowires with large variations in lengths. Different Ga-concentrations were measured in the different seed particles, which suggested that the Au and the AgAu seed particles were liquid during growth, whereas Ag particles were solid. The chemical potential of Ga was however found to be similar for all three seed materials. We propose that the Ga concentrations are determined by the chemical potential of Ga, which in turn explains why Ag-seeded nanowire growth proceeds with a solid particle. Overall, this study shows that varying the seed material can be a powerful tool to gain a deeper understanding of particle assisted nanowire growth.</p>},
  author       = {Mårtensson, Erik K. and Whiticar, Alexander M. and De La Mata, Maria and Zamani, Reza R. and Johansson, Jonas and Nygård, Jesper and Dick, Kimberly A. and Bolinsson, Jessica},
  issn         = {1528-7483},
  language     = {eng},
  pages        = {6702--6712},
  publisher    = {The American Chemical Society (ACS)},
  series       = {Crystal Growth and Design},
  title        = {Understanding GaAs Nanowire Growth in the Ag-Au Seed Materials System},
  url          = {http://dx.doi.org/10.1021/acs.cgd.8b00949},
  doi          = {10.1021/acs.cgd.8b00949},
  year         = {2018},
}