Advanced

Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions

Potts, Heidi LU ; Van Hees, Youri ; Tütüncüoglu, Gözde ; Friedl, Martin ; Leran, Jean-baptiste and Fontcuberta I Morral, Anna (2017) In Crystal Growth & Design 17(7). p.3596-3605
Abstract
Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on (111)B GaAs. The tilted direction is predominantly the result of a three-dimensional twinning phenomenon at the initial stages of growth, so far only observed in VLS growth. We also find some nanowires growing in ⟨112⟩ and other directions. We further demonstrate how the tilting of nanowires can be engineered by modifying the growth conditions, and outline the procedures to achieve fully vertical or tilted nanowire ensembles. Conditions leading to a high density of tilted nanowires also... (More)
Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on (111)B GaAs. The tilted direction is predominantly the result of a three-dimensional twinning phenomenon at the initial stages of growth, so far only observed in VLS growth. We also find some nanowires growing in ⟨112⟩ and other directions. We further demonstrate how the tilting of nanowires can be engineered by modifying the growth conditions, and outline the procedures to achieve fully vertical or tilted nanowire ensembles. Conditions leading to a high density of tilted nanowires also provide a way to grow nanoscale crosses. This work opens the path toward achieving control over nanowire structures and related hierarchical structures. (Less)
Please use this url to cite or link to this publication:
author
publishing date
type
Contribution to journal
publication status
published
subject
in
Crystal Growth & Design
volume
17
issue
7
pages
3596 - 3605
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85021891061
ISSN
1528-7483
DOI
10.1021/acs.cgd.7b00487
language
English
LU publication?
no
id
ec7e99ff-70e4-4933-a82e-99ebbdf02356
alternative location
http://pubs.acs.org/doi/10.1021/acs.cgd.7b00487
date added to LUP
2018-03-02 09:56:54
date last changed
2020-01-13 00:29:57
@article{ec7e99ff-70e4-4933-a82e-99ebbdf02356,
  abstract     = {Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on (111)B GaAs. The tilted direction is predominantly the result of a three-dimensional twinning phenomenon at the initial stages of growth, so far only observed in VLS growth. We also find some nanowires growing in ⟨112⟩ and other directions. We further demonstrate how the tilting of nanowires can be engineered by modifying the growth conditions, and outline the procedures to achieve fully vertical or tilted nanowire ensembles. Conditions leading to a high density of tilted nanowires also provide a way to grow nanoscale crosses. This work opens the path toward achieving control over nanowire structures and related hierarchical structures.},
  author       = {Potts, Heidi and Van Hees, Youri and Tütüncüoglu, Gözde and Friedl, Martin and Leran, Jean-baptiste and Fontcuberta I Morral, Anna},
  issn         = {1528-7483},
  language     = {eng},
  month        = {07},
  number       = {7},
  pages        = {3596--3605},
  publisher    = {The American Chemical Society (ACS)},
  series       = {Crystal Growth & Design},
  title        = {Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions},
  url          = {http://dx.doi.org/10.1021/acs.cgd.7b00487},
  doi          = {10.1021/acs.cgd.7b00487},
  volume       = {17},
  year         = {2017},
}