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Carrier Recombination Processes in Gallium Indium Phosphide Nanowires

Zhang, Wei LU ; Zeng, Xulu LU ; Su, Xiaojun LU ; Zou, Xianshao LU ; Mante, Pierre Adrien LU ; Borgström, Magnus T. LU and Yartsev, Arkady LU (2017) In Nano Letters 17(7). p.4248-4254
Abstract

Understanding of recombination and photoconductivity dynamics of photogenerated charge carriers in GaxIn1-xP NWs is essential for their optoelectronic applications. In this letter, we have studied a series of GaxIn1-xP NWs with varied Ga composition. Time-resolved photoinduced luminescence, femtosecond transient absorption, and time-resolved THz transmission measurements were performed to assess radiative and nonradiative recombination and photoconductivity dynamics of photogenerated charges in the NWs. We conclude that radiative recombination dynamics is limited by hole trapping, whereas electrons are highly mobile until they recombine nonradiatively. We also resolve gradual decrease of... (More)

Understanding of recombination and photoconductivity dynamics of photogenerated charge carriers in GaxIn1-xP NWs is essential for their optoelectronic applications. In this letter, we have studied a series of GaxIn1-xP NWs with varied Ga composition. Time-resolved photoinduced luminescence, femtosecond transient absorption, and time-resolved THz transmission measurements were performed to assess radiative and nonradiative recombination and photoconductivity dynamics of photogenerated charges in the NWs. We conclude that radiative recombination dynamics is limited by hole trapping, whereas electrons are highly mobile until they recombine nonradiatively. We also resolve gradual decrease of mobility of photogenerated electrons assigned to electron trapping and detrapping in a distribution of trap states. We identify that the nonradiative recombination of charges is much slower than the decay of the photoluminescence signal. Further, we conclude that trapping of both electrons and holes as well as nonradiative recombination become faster with increasing Ga composition in GaxIn1-xP NWs. We have estimated early time electron mobility in GaxIn1-xP NWs and found it to be strongly dependent on Ga composition due to the contribution of electrons in the X-valley.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
carrier recombination, Gallium indium phosphide, mobility, nanowire, photoconductivity
in
Nano Letters
volume
17
issue
7
pages
7 pages
publisher
The American Chemical Society
external identifiers
  • scopus:85027035126
  • wos:000405643300036
ISSN
1530-6984
DOI
10.1021/acs.nanolett.7b01159
language
English
LU publication?
yes
id
efcbf860-50df-4acd-90cb-2dccc449474d
date added to LUP
2017-08-31 14:36:49
date last changed
2018-01-07 12:17:00
@article{efcbf860-50df-4acd-90cb-2dccc449474d,
  abstract     = {<p>Understanding of recombination and photoconductivity dynamics of photogenerated charge carriers in Ga<sub>x</sub>In<sub>1-x</sub>P NWs is essential for their optoelectronic applications. In this letter, we have studied a series of Ga<sub>x</sub>In<sub>1-x</sub>P NWs with varied Ga composition. Time-resolved photoinduced luminescence, femtosecond transient absorption, and time-resolved THz transmission measurements were performed to assess radiative and nonradiative recombination and photoconductivity dynamics of photogenerated charges in the NWs. We conclude that radiative recombination dynamics is limited by hole trapping, whereas electrons are highly mobile until they recombine nonradiatively. We also resolve gradual decrease of mobility of photogenerated electrons assigned to electron trapping and detrapping in a distribution of trap states. We identify that the nonradiative recombination of charges is much slower than the decay of the photoluminescence signal. Further, we conclude that trapping of both electrons and holes as well as nonradiative recombination become faster with increasing Ga composition in Ga<sub>x</sub>In<sub>1-x</sub>P NWs. We have estimated early time electron mobility in Ga<sub>x</sub>In<sub>1-x</sub>P NWs and found it to be strongly dependent on Ga composition due to the contribution of electrons in the X-valley.</p>},
  author       = {Zhang, Wei and Zeng, Xulu and Su, Xiaojun and Zou, Xianshao and Mante, Pierre Adrien and Borgström, Magnus T. and Yartsev, Arkady},
  issn         = {1530-6984},
  keyword      = {carrier recombination,Gallium indium phosphide,mobility,nanowire,photoconductivity},
  language     = {eng},
  month        = {07},
  number       = {7},
  pages        = {4248--4254},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Carrier Recombination Processes in Gallium Indium Phosphide Nanowires},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.7b01159},
  volume       = {17},
  year         = {2017},
}