Carrier Recombination Processes in Gallium Indium Phosphide Nanowires
(2017) In Nano Letters 17(7). p.4248-4254- Abstract
Understanding of recombination and photoconductivity dynamics of photogenerated charge carriers in GaxIn1-xP NWs is essential for their optoelectronic applications. In this letter, we have studied a series of GaxIn1-xP NWs with varied Ga composition. Time-resolved photoinduced luminescence, femtosecond transient absorption, and time-resolved THz transmission measurements were performed to assess radiative and nonradiative recombination and photoconductivity dynamics of photogenerated charges in the NWs. We conclude that radiative recombination dynamics is limited by hole trapping, whereas electrons are highly mobile until they recombine nonradiatively. We also resolve gradual decrease of... (More)
Understanding of recombination and photoconductivity dynamics of photogenerated charge carriers in GaxIn1-xP NWs is essential for their optoelectronic applications. In this letter, we have studied a series of GaxIn1-xP NWs with varied Ga composition. Time-resolved photoinduced luminescence, femtosecond transient absorption, and time-resolved THz transmission measurements were performed to assess radiative and nonradiative recombination and photoconductivity dynamics of photogenerated charges in the NWs. We conclude that radiative recombination dynamics is limited by hole trapping, whereas electrons are highly mobile until they recombine nonradiatively. We also resolve gradual decrease of mobility of photogenerated electrons assigned to electron trapping and detrapping in a distribution of trap states. We identify that the nonradiative recombination of charges is much slower than the decay of the photoluminescence signal. Further, we conclude that trapping of both electrons and holes as well as nonradiative recombination become faster with increasing Ga composition in GaxIn1-xP NWs. We have estimated early time electron mobility in GaxIn1-xP NWs and found it to be strongly dependent on Ga composition due to the contribution of electrons in the X-valley.
(Less)
- author
- Zhang, Wei
LU
; Zeng, Xulu
LU
; Su, Xiaojun
LU
; Zou, Xianshao
LU
; Mante, Pierre Adrien
LU
; Borgström, Magnus T.
LU
and Yartsev, Arkady LU
- organization
- publishing date
- 2017-07-12
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- carrier recombination, Gallium indium phosphide, mobility, nanowire, photoconductivity
- in
- Nano Letters
- volume
- 17
- issue
- 7
- pages
- 7 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:28654299
- wos:000405643300036
- scopus:85027035126
- ISSN
- 1530-6984
- DOI
- 10.1021/acs.nanolett.7b01159
- language
- English
- LU publication?
- yes
- id
- efcbf860-50df-4acd-90cb-2dccc449474d
- date added to LUP
- 2017-08-31 14:36:49
- date last changed
- 2025-01-07 19:44:35
@article{efcbf860-50df-4acd-90cb-2dccc449474d, abstract = {{<p>Understanding of recombination and photoconductivity dynamics of photogenerated charge carriers in Ga<sub>x</sub>In<sub>1-x</sub>P NWs is essential for their optoelectronic applications. In this letter, we have studied a series of Ga<sub>x</sub>In<sub>1-x</sub>P NWs with varied Ga composition. Time-resolved photoinduced luminescence, femtosecond transient absorption, and time-resolved THz transmission measurements were performed to assess radiative and nonradiative recombination and photoconductivity dynamics of photogenerated charges in the NWs. We conclude that radiative recombination dynamics is limited by hole trapping, whereas electrons are highly mobile until they recombine nonradiatively. We also resolve gradual decrease of mobility of photogenerated electrons assigned to electron trapping and detrapping in a distribution of trap states. We identify that the nonradiative recombination of charges is much slower than the decay of the photoluminescence signal. Further, we conclude that trapping of both electrons and holes as well as nonradiative recombination become faster with increasing Ga composition in Ga<sub>x</sub>In<sub>1-x</sub>P NWs. We have estimated early time electron mobility in Ga<sub>x</sub>In<sub>1-x</sub>P NWs and found it to be strongly dependent on Ga composition due to the contribution of electrons in the X-valley.</p>}}, author = {{Zhang, Wei and Zeng, Xulu and Su, Xiaojun and Zou, Xianshao and Mante, Pierre Adrien and Borgström, Magnus T. and Yartsev, Arkady}}, issn = {{1530-6984}}, keywords = {{carrier recombination; Gallium indium phosphide; mobility; nanowire; photoconductivity}}, language = {{eng}}, month = {{07}}, number = {{7}}, pages = {{4248--4254}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Carrier Recombination Processes in Gallium Indium Phosphide Nanowires}}, url = {{http://dx.doi.org/10.1021/acs.nanolett.7b01159}}, doi = {{10.1021/acs.nanolett.7b01159}}, volume = {{17}}, year = {{2017}}, }