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Dense, Regular GaAs Nanowire Arrays by Catalyst-Free Vapor Phase Epitaxy for Light Harvesting

Jin, Jiehong; Stoica, Toma; Trellenkamp, Stefan; Chen, Yang LU ; Anttu, Nicklas LU ; Migunov, Vadim; Kawabata, Rudy M S; Buenconsejo, Pio J S; Lam, Yeng M. and Haas, Fabian, et al. (2016) In ACS Applied Materials and Interfaces 8(34). p.22484-22492
Abstract

Density dependent growth and optical properties of periodic arrays of GaAs nanowires (NWs) by fast selective area growth MOVPE are investigated. As the period of the arrays is decreased from 500 nm down to 100 nm, a volume growth enhancement by a factor of up to four compared with the growth of a planar layer is observed. This increase is explained as resulting from increased collection of precursors on the side walls of the nanowires due to the gas flow redistribution in the space between the NWs. Normal spectral reflectance of the arrays is strongly reduced compared with a flat substrate surface in all fabricated arrays. Electromagnetic modeling reveals that this reduction is caused by antireflective action of the nanowire arrays and... (More)

Density dependent growth and optical properties of periodic arrays of GaAs nanowires (NWs) by fast selective area growth MOVPE are investigated. As the period of the arrays is decreased from 500 nm down to 100 nm, a volume growth enhancement by a factor of up to four compared with the growth of a planar layer is observed. This increase is explained as resulting from increased collection of precursors on the side walls of the nanowires due to the gas flow redistribution in the space between the NWs. Normal spectral reflectance of the arrays is strongly reduced compared with a flat substrate surface in all fabricated arrays. Electromagnetic modeling reveals that this reduction is caused by antireflective action of the nanowire arrays and nanowire-diameter dependent light absorption. Irrespective of the periodicity and diameter, Raman scattering and grazing angle X-ray diffraction show signal from zinc blende and wurtzite phases, the latter originating from stacking faults as observed by high resolution transmission electron microscopy. Raman spectra contain intense surface phonons peaks, whose intensity depends strongly on the nanowire diameters as a result of potential structural changes and as well as variations of optical field distribution in the nanowires.

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publication status
published
subject
keywords
GaAs nanowires, metalorganic vapor phase epitaxy, optical spectroscopy, Raman spectroscopy, selective area growth
in
ACS Applied Materials and Interfaces
volume
8
issue
34
pages
9 pages
publisher
The American Chemical Society
external identifiers
  • scopus:84985019001
  • wos:000382514100078
ISSN
1944-8244
DOI
10.1021/acsami.6b05581
language
English
LU publication?
yes
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f2758b19-4084-4627-9af4-489837bc1398
date added to LUP
2016-11-30 09:27:37
date last changed
2017-01-01 08:41:13
@article{f2758b19-4084-4627-9af4-489837bc1398,
  abstract     = {<p>Density dependent growth and optical properties of periodic arrays of GaAs nanowires (NWs) by fast selective area growth MOVPE are investigated. As the period of the arrays is decreased from 500 nm down to 100 nm, a volume growth enhancement by a factor of up to four compared with the growth of a planar layer is observed. This increase is explained as resulting from increased collection of precursors on the side walls of the nanowires due to the gas flow redistribution in the space between the NWs. Normal spectral reflectance of the arrays is strongly reduced compared with a flat substrate surface in all fabricated arrays. Electromagnetic modeling reveals that this reduction is caused by antireflective action of the nanowire arrays and nanowire-diameter dependent light absorption. Irrespective of the periodicity and diameter, Raman scattering and grazing angle X-ray diffraction show signal from zinc blende and wurtzite phases, the latter originating from stacking faults as observed by high resolution transmission electron microscopy. Raman spectra contain intense surface phonons peaks, whose intensity depends strongly on the nanowire diameters as a result of potential structural changes and as well as variations of optical field distribution in the nanowires.</p>},
  author       = {Jin, Jiehong and Stoica, Toma and Trellenkamp, Stefan and Chen, Yang and Anttu, Nicklas and Migunov, Vadim and Kawabata, Rudy M S and Buenconsejo, Pio J S and Lam, Yeng M. and Haas, Fabian and Hardtdegen, Hilde and Grützmacher, Detlev and Kardynał, Beata E.},
  issn         = {1944-8244},
  keyword      = {GaAs nanowires,metalorganic vapor phase epitaxy,optical spectroscopy,Raman spectroscopy,selective area growth},
  language     = {eng},
  month        = {08},
  number       = {34},
  pages        = {22484--22492},
  publisher    = {The American Chemical Society},
  series       = {ACS Applied Materials and Interfaces},
  title        = {Dense, Regular GaAs Nanowire Arrays by Catalyst-Free Vapor Phase Epitaxy for Light Harvesting},
  url          = {http://dx.doi.org/10.1021/acsami.6b05581},
  volume       = {8},
  year         = {2016},
}