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Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications

Hannula, M.; Lahtonen, K.; Ali-Löytty, H.; Zakharov, A. A. LU ; Isotalo, T.; Saari, J. and Valden, M. (2016) In Scripta Materialia 119. p.76-81
Abstract

We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO2 grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photoemission electron microscopy results reveal that the transformation from TiO2 to TiSi at 950 °C proceeds via island formation. Inside the islands, TiO2 reduction and Si diffusion play important roles in the formation of the highly topographically microstructured TiSi interface with laterally nonuniform barrier height contact. This is advantageous for efficient charge transfer in Si-based heterostructures for photovoltaic and photoelectrochemical applications.

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author
organization
publishing date
type
Contribution to journal
publication status
published
keywords
Atomic layer deposition (ALD), Semiconductors, Surface modification, Transition metal silicides, X-ray photoelectron spectroscopy (XPS)
in
Scripta Materialia
volume
119
pages
6 pages
publisher
Elsevier
external identifiers
  • scopus:84963553679
  • wos:000375814200017
ISSN
1359-6462
DOI
10.1016/j.scriptamat.2016.03.016
language
English
LU publication?
yes
id
f2b04c7f-6415-4329-b4c0-fa91804923ab
date added to LUP
2016-04-29 12:06:31
date last changed
2017-01-01 08:24:16
@article{f2b04c7f-6415-4329-b4c0-fa91804923ab,
  abstract     = {<p>We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO<sub>2</sub> grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photoemission electron microscopy results reveal that the transformation from TiO<sub>2</sub> to TiSi at 950 °C proceeds via island formation. Inside the islands, TiO<sub>2</sub> reduction and Si diffusion play important roles in the formation of the highly topographically microstructured TiSi interface with laterally nonuniform barrier height contact. This is advantageous for efficient charge transfer in Si-based heterostructures for photovoltaic and photoelectrochemical applications.</p>},
  author       = {Hannula, M. and Lahtonen, K. and Ali-Löytty, H. and Zakharov, A. A. and Isotalo, T. and Saari, J. and Valden, M.},
  issn         = {1359-6462},
  keyword      = {Atomic layer deposition (ALD),Semiconductors,Surface modification,Transition metal silicides,X-ray photoelectron spectroscopy (XPS)},
  language     = {eng},
  month        = {07},
  pages        = {76--81},
  publisher    = {Elsevier},
  series       = {Scripta Materialia},
  title        = {Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications},
  url          = {http://dx.doi.org/10.1016/j.scriptamat.2016.03.016},
  volume       = {119},
  year         = {2016},
}