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Optimal geometry of lateral GaAs and Si/SiGe quantum dots for electrical control of spin qubits

Malkoc, Ognjen LU ; Stano, Peter and Loss, Daniel (2016) In Physical Review B 93(23).
Abstract
We investigate the effects of the orientation of the magnetic field and the orientation of a quantum dot, with respect to crystallographic coordinates, on the quality of an electrically controlled qubit realized in a gated semiconductor quantum dot. We find that, due to the anisotropy of the spin-orbit interactions, by varying the two orientations it is possible to tune the qubit in the sense of optimizing the ratio of its couplings to phonons and to a control electric field. We find conditions under which such optimal setup can be reached by solely reorienting the magnetic field, and when a specific positioning of the dot is required. We also find that the knowledge of the relative sign of the spin-orbit interaction strengths allows to... (More)
We investigate the effects of the orientation of the magnetic field and the orientation of a quantum dot, with respect to crystallographic coordinates, on the quality of an electrically controlled qubit realized in a gated semiconductor quantum dot. We find that, due to the anisotropy of the spin-orbit interactions, by varying the two orientations it is possible to tune the qubit in the sense of optimizing the ratio of its couplings to phonons and to a control electric field. We find conditions under which such optimal setup can be reached by solely reorienting the magnetic field, and when a specific positioning of the dot is required. We also find that the knowledge of the relative sign of the spin-orbit interaction strengths allows to choose a robust optimal dot geometry, with the dot main axis along [110], or [110], where the qubit can be always optimized by reorienting the magnetic field. © 2016 American Physical Society. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B
volume
93
issue
23
publisher
American Physical Society
external identifiers
  • scopus:84975168288
  • wos:000377498400003
ISSN
1550-235X
DOI
10.1103/PhysRevB.93.235413
language
English
LU publication?
yes
id
f356bc4c-3729-4c2d-adf9-bc5d444b2f8e
date added to LUP
2017-01-10 09:07:21
date last changed
2017-09-18 11:35:33
@article{f356bc4c-3729-4c2d-adf9-bc5d444b2f8e,
  abstract     = {We investigate the effects of the orientation of the magnetic field and the orientation of a quantum dot, with respect to crystallographic coordinates, on the quality of an electrically controlled qubit realized in a gated semiconductor quantum dot. We find that, due to the anisotropy of the spin-orbit interactions, by varying the two orientations it is possible to tune the qubit in the sense of optimizing the ratio of its couplings to phonons and to a control electric field. We find conditions under which such optimal setup can be reached by solely reorienting the magnetic field, and when a specific positioning of the dot is required. We also find that the knowledge of the relative sign of the spin-orbit interaction strengths allows to choose a robust optimal dot geometry, with the dot main axis along [110], or [110], where the qubit can be always optimized by reorienting the magnetic field. © 2016 American Physical Society.},
  articleno    = {235413},
  author       = {Malkoc, Ognjen and Stano, Peter and Loss, Daniel},
  issn         = {1550-235X},
  language     = {eng},
  month        = {06},
  number       = {23},
  publisher    = {American Physical Society},
  series       = {Physical Review B},
  title        = {Optimal geometry of lateral GaAs and Si/SiGe quantum dots for electrical control of spin qubits},
  url          = {http://dx.doi.org/10.1103/PhysRevB.93.235413},
  volume       = {93},
  year         = {2016},
}