Optimal geometry of lateral GaAs and Si/SiGe quantum dots for electrical control of spin qubits
(2016) In Physical Review B 93(23).- Abstract
- We investigate the effects of the orientation of the magnetic field and the orientation of a quantum dot, with respect to crystallographic coordinates, on the quality of an electrically controlled qubit realized in a gated semiconductor quantum dot. We find that, due to the anisotropy of the spin-orbit interactions, by varying the two orientations it is possible to tune the qubit in the sense of optimizing the ratio of its couplings to phonons and to a control electric field. We find conditions under which such optimal setup can be reached by solely reorienting the magnetic field, and when a specific positioning of the dot is required. We also find that the knowledge of the relative sign of the spin-orbit interaction strengths allows to... (More)
- We investigate the effects of the orientation of the magnetic field and the orientation of a quantum dot, with respect to crystallographic coordinates, on the quality of an electrically controlled qubit realized in a gated semiconductor quantum dot. We find that, due to the anisotropy of the spin-orbit interactions, by varying the two orientations it is possible to tune the qubit in the sense of optimizing the ratio of its couplings to phonons and to a control electric field. We find conditions under which such optimal setup can be reached by solely reorienting the magnetic field, and when a specific positioning of the dot is required. We also find that the knowledge of the relative sign of the spin-orbit interaction strengths allows to choose a robust optimal dot geometry, with the dot main axis along [110], or [110], where the qubit can be always optimized by reorienting the magnetic field. © 2016 American Physical Society. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/f356bc4c-3729-4c2d-adf9-bc5d444b2f8e
- author
- Malkoc, Ognjen LU ; Stano, Peter and Loss, Daniel
- organization
- publishing date
- 2016-06-09
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B
- volume
- 93
- issue
- 23
- article number
- 235413
- publisher
- American Physical Society
- external identifiers
-
- scopus:84975168288
- wos:000377498400003
- ISSN
- 1550-235X
- DOI
- 10.1103/PhysRevB.93.235413
- language
- English
- LU publication?
- yes
- id
- f356bc4c-3729-4c2d-adf9-bc5d444b2f8e
- date added to LUP
- 2017-01-10 09:07:21
- date last changed
- 2022-04-09 02:11:06
@article{f356bc4c-3729-4c2d-adf9-bc5d444b2f8e,
abstract = {{We investigate the effects of the orientation of the magnetic field and the orientation of a quantum dot, with respect to crystallographic coordinates, on the quality of an electrically controlled qubit realized in a gated semiconductor quantum dot. We find that, due to the anisotropy of the spin-orbit interactions, by varying the two orientations it is possible to tune the qubit in the sense of optimizing the ratio of its couplings to phonons and to a control electric field. We find conditions under which such optimal setup can be reached by solely reorienting the magnetic field, and when a specific positioning of the dot is required. We also find that the knowledge of the relative sign of the spin-orbit interaction strengths allows to choose a robust optimal dot geometry, with the dot main axis along [110], or [110], where the qubit can be always optimized by reorienting the magnetic field. © 2016 American Physical Society.}},
author = {{Malkoc, Ognjen and Stano, Peter and Loss, Daniel}},
issn = {{1550-235X}},
language = {{eng}},
month = {{06}},
number = {{23}},
publisher = {{American Physical Society}},
series = {{Physical Review B}},
title = {{Optimal geometry of lateral GaAs and Si/SiGe quantum dots for electrical control of spin qubits}},
url = {{http://dx.doi.org/10.1103/PhysRevB.93.235413}},
doi = {{10.1103/PhysRevB.93.235413}},
volume = {{93}},
year = {{2016}},
}