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Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN

Colakerol, L; Glans, PA; Plucinski, L; Zhang, Y; Smith, KE; Zakharov, Alexei LU ; Nyholm, Ralf LU ; Cabalu, J and Moustakas, TD (2006) In Journal of Electron Spectroscopy and Related Phenomena 152(1-2). p.25-28
Abstract
Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film InxGa1-xN alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d(8) state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of InxGa1-x thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant... (More)
Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film InxGa1-xN alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d(8) state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of InxGa1-x thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases. (c) 2006 Elsevier B.V. All rights reserved. (Less)
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author
organization
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type
Contribution to journal
publication status
published
subject
keywords
surfaces, photoemission, semiconductors, electronic structure
in
Journal of Electron Spectroscopy and Related Phenomena
volume
152
issue
1-2
pages
25 - 28
publisher
Elsevier
external identifiers
  • wos:000238788700005
  • scopus:33646827514
ISSN
0368-2048
DOI
10.1016/j.elspec.2006.03.001
language
English
LU publication?
yes
id
f3d0cad9-0e2f-40f4-a1d0-18ce5ea2156a (old id 404499)
date added to LUP
2007-10-02 09:07:33
date last changed
2019-02-20 07:31:47
@article{f3d0cad9-0e2f-40f4-a1d0-18ce5ea2156a,
  abstract     = {Resonance effects at the Ga 3p photoabsorption threshold have been observed in photoemission spectra recorded from thin film InxGa1-xN alloys. The spectra display satellites of the main Ga 3d emission line, and the intensity of these satellites resonate at this threshold. The satellites are associated with a 3d(8) state, and have previously been observed for the semiconductors GaN, GaAs, and GaP. The resonance behavior has been studied for a variety of InxGa1-x thin films with differing In concentration and band gap. The photon energy where the maximum resonance is observed varies with band gap within the alloy system, but does not follow the trend observed for binary Ga semiconducting compounds. We also observe that the threshold resonant energy increases slightly as the In content increases. (c) 2006 Elsevier B.V. All rights reserved.},
  author       = {Colakerol, L and Glans, PA and Plucinski, L and Zhang, Y and Smith, KE and Zakharov, Alexei and Nyholm, Ralf and Cabalu, J and Moustakas, TD},
  issn         = {0368-2048},
  keyword      = {surfaces,photoemission,semiconductors,electronic structure},
  language     = {eng},
  number       = {1-2},
  pages        = {25--28},
  publisher    = {Elsevier},
  series       = {Journal of Electron Spectroscopy and Related Phenomena},
  title        = {Resonant photoemission at the Ga 3p photothreshold in InxGa1-xN},
  url          = {http://dx.doi.org/10.1016/j.elspec.2006.03.001},
  volume       = {152},
  year         = {2006},
}