Single-crystalline Ge grown epitaxially on oxidized and reduced Ge/Si(100) islands
Zela, Vilma LU ; Gustafsson, Anders LU
and Seifert, Werner
LU
(2004)
In Journal of Crystal Growth
263(1-4).
p.90-93
- Abstract
- In this paper, the Ge overgrowth of oxidized and reduced Ge/Si islands is studied. The islands were grown in a hotwall ultrahigh vacuum chemical vapour deposition reactor. The oxidation was performed in air at room temperature and the reduction in a hydrogen atmosphere at 600degreesC. After reduction, Ge was deposited at the same temperature. The results of the overgrowth show that the reduced native oxide on top of the islands transfers the epitaxial information from the Si substrate to the epitaxial layer, whereas no growth takes place outside the Ge islands. This makes it possible to use these islands as crystal seeds for epitaxial lateral overgrowth for growing Ge layers on top of Si substrates. (C) 2003 Elsevier B.V. All rights... (More)
- In this paper, the Ge overgrowth of oxidized and reduced Ge/Si islands is studied. The islands were grown in a hotwall ultrahigh vacuum chemical vapour deposition reactor. The oxidation was performed in air at room temperature and the reduction in a hydrogen atmosphere at 600degreesC. After reduction, Ge was deposited at the same temperature. The results of the overgrowth show that the reduced native oxide on top of the islands transfers the epitaxial information from the Si substrate to the epitaxial layer, whereas no growth takes place outside the Ge islands. This makes it possible to use these islands as crystal seeds for epitaxial lateral overgrowth for growing Ge layers on top of Si substrates. (C) 2003 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/284848
- author
- Zela, Vilma
LU
; Gustafsson, Anders
LU
and Seifert, Werner
LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- nanostructures, chemical vapor deposition processes, germanium silicon, alloys
- in
- Journal of Crystal Growth
- volume
- 263
- issue
- 1-4
- pages
- 90 - 93
- publisher
- Elsevier
- external identifiers
-
- wos:000220184400015
- scopus:1242286501
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2003.11.067
- language
- English
- LU publication?
- yes
- id
- f5605071-4237-4ce7-9f99-bea7b1bc318f (old id 284848)
- date added to LUP
- 2016-04-01 17:05:19
- date last changed
- 2023-09-05 06:57:37
@article{f5605071-4237-4ce7-9f99-bea7b1bc318f,
abstract = {{In this paper, the Ge overgrowth of oxidized and reduced Ge/Si islands is studied. The islands were grown in a hotwall ultrahigh vacuum chemical vapour deposition reactor. The oxidation was performed in air at room temperature and the reduction in a hydrogen atmosphere at 600degreesC. After reduction, Ge was deposited at the same temperature. The results of the overgrowth show that the reduced native oxide on top of the islands transfers the epitaxial information from the Si substrate to the epitaxial layer, whereas no growth takes place outside the Ge islands. This makes it possible to use these islands as crystal seeds for epitaxial lateral overgrowth for growing Ge layers on top of Si substrates. (C) 2003 Elsevier B.V. All rights reserved.}},
author = {{Zela, Vilma and Gustafsson, Anders and Seifert, Werner}},
issn = {{0022-0248}},
keywords = {{nanostructures; chemical vapor deposition processes; germanium silicon; alloys}},
language = {{eng}},
number = {{1-4}},
pages = {{90--93}},
publisher = {{Elsevier}},
series = {{Journal of Crystal Growth}},
title = {{Single-crystalline Ge grown epitaxially on oxidized and reduced Ge/Si(100) islands}},
url = {{http://dx.doi.org/10.1016/j.jcrysgro.2003.11.067}},
doi = {{10.1016/j.jcrysgro.2003.11.067}},
volume = {{263}},
year = {{2004}},
}