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Probe of local impurity states by bend resistance measurements in graphene cross junctions

Du, J.; Li, J. Y.; Kang, N.; Lin, Li-Yen; Peng, Hailin; Liu, Zhongfan and Xu, H. Q. LU (2016) In Nanotechnology 27(24).
Abstract

We report on low-temperature transport measurements on four-terminal cross junction devices fabricated from high-quality graphene grown by chemical vapor deposition. At high magnetic fields, the bend resistance reveals pronounced peak structures at the quantum Hall plateau transition, which can be attributed to the edge state transport through the junctions. We further demonstrate that the bend resistance is drastically affected by the presence of local impurity states in the junction regions, and exhibits an unusual asymmetric behavior with respect to the magnetic field direction. The observations can be understood in a model taking into account the combination of the edge transport and an asymmetric scatterer. Our results demonstrate... (More)

We report on low-temperature transport measurements on four-terminal cross junction devices fabricated from high-quality graphene grown by chemical vapor deposition. At high magnetic fields, the bend resistance reveals pronounced peak structures at the quantum Hall plateau transition, which can be attributed to the edge state transport through the junctions. We further demonstrate that the bend resistance is drastically affected by the presence of local impurity states in the junction regions, and exhibits an unusual asymmetric behavior with respect to the magnetic field direction. The observations can be understood in a model taking into account the combination of the edge transport and an asymmetric scatterer. Our results demonstrate that a graphene cross junction may serve as a sensitive probe of local impurity states in graphene at the nanoscale.

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Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
bend resistance, cross-junction, edge transport, graphene
in
Nanotechnology
volume
27
issue
24
publisher
IOP Publishing
external identifiers
  • scopus:84969730130
  • wos:000376404500006
ISSN
0957-4484
DOI
10.1088/0957-4484/27/24/245204
language
English
LU publication?
yes
id
f6bf68c8-dc10-4859-a853-b7368fd00bc8
date added to LUP
2017-02-01 11:11:07
date last changed
2017-09-18 11:35:08
@article{f6bf68c8-dc10-4859-a853-b7368fd00bc8,
  abstract     = {<p>We report on low-temperature transport measurements on four-terminal cross junction devices fabricated from high-quality graphene grown by chemical vapor deposition. At high magnetic fields, the bend resistance reveals pronounced peak structures at the quantum Hall plateau transition, which can be attributed to the edge state transport through the junctions. We further demonstrate that the bend resistance is drastically affected by the presence of local impurity states in the junction regions, and exhibits an unusual asymmetric behavior with respect to the magnetic field direction. The observations can be understood in a model taking into account the combination of the edge transport and an asymmetric scatterer. Our results demonstrate that a graphene cross junction may serve as a sensitive probe of local impurity states in graphene at the nanoscale.</p>},
  articleno    = {245204},
  author       = {Du, J. and Li, J. Y. and Kang, N. and Lin, Li-Yen and Peng, Hailin and Liu, Zhongfan and Xu, H. Q.},
  issn         = {0957-4484},
  keyword      = {bend resistance,cross-junction,edge transport,graphene},
  language     = {eng},
  month        = {05},
  number       = {24},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Probe of local impurity states by bend resistance measurements in graphene cross junctions},
  url          = {http://dx.doi.org/10.1088/0957-4484/27/24/245204},
  volume       = {27},
  year         = {2016},
}