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Effect of Ge autodoping during III-V MOVPE growth on Ge substrates

Barrutia, Laura; Barrigón, Enrique LU ; García, Iván; Rey-Stolle, Ignacio and Algora, Carlos (2017) In Journal of Crystal Growth 475. p.378-383
Abstract

During the MOVPE growth of III-V layers on Ge substrates, Ge atoms can be evaporated or etched from the back of the wafer and reach the growth surface, becoming incorporated into the epilayers. This is the so-called Ge autodoping effect, which we have studied through a set of growth experiments of GaInP and Ga(In)As layers lattice matched to Ge substrates, which have been characterized by Secondary Ion Mass Spectroscopy. The role of V/III ratio and growth rate on Ge autodoping has been studied and a MOVPE reactor pre-conditioning prior to the epitaxial growth of III-V semiconductor layers that mitigates this Ge autodoping has been identified. In addition, the use of 2-in. versus 4-in. Ge substrates has been compared and the use of a... (More)

During the MOVPE growth of III-V layers on Ge substrates, Ge atoms can be evaporated or etched from the back of the wafer and reach the growth surface, becoming incorporated into the epilayers. This is the so-called Ge autodoping effect, which we have studied through a set of growth experiments of GaInP and Ga(In)As layers lattice matched to Ge substrates, which have been characterized by Secondary Ion Mass Spectroscopy. The role of V/III ratio and growth rate on Ge autodoping has been studied and a MOVPE reactor pre-conditioning prior to the epitaxial growth of III-V semiconductor layers that mitigates this Ge autodoping has been identified. In addition, the use of 2-in. versus 4-in. Ge substrates has been compared and the use of a Si3N4 backside coating for the Ge substrates has been evaluated.

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organization
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publication status
published
subject
keywords
GaInP solar cells, Ge autodoping, III-V semiconductor, Multijunction solar cell, EU Horizon 2020, NEXTNANOCELLS, Grant 656208
in
Journal of Crystal Growth
volume
475
pages
6 pages
publisher
Elsevier
external identifiers
  • scopus:85021789521
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2017.06.022
language
English
LU publication?
yes
id
f6ed4b78-9b7c-4f86-9da5-6ac1be932794
date added to LUP
2018-04-19 13:30:35
date last changed
2018-05-17 06:45:48
@article{f6ed4b78-9b7c-4f86-9da5-6ac1be932794,
  abstract     = {<p>During the MOVPE growth of III-V layers on Ge substrates, Ge atoms can be evaporated or etched from the back of the wafer and reach the growth surface, becoming incorporated into the epilayers. This is the so-called Ge autodoping effect, which we have studied through a set of growth experiments of GaInP and Ga(In)As layers lattice matched to Ge substrates, which have been characterized by Secondary Ion Mass Spectroscopy. The role of V/III ratio and growth rate on Ge autodoping has been studied and a MOVPE reactor pre-conditioning prior to the epitaxial growth of III-V semiconductor layers that mitigates this Ge autodoping has been identified. In addition, the use of 2-in. versus 4-in. Ge substrates has been compared and the use of a Si<sub>3</sub>N<sub>4</sub> backside coating for the Ge substrates has been evaluated.</p>},
  author       = {Barrutia, Laura and Barrigón, Enrique and García, Iván and Rey-Stolle, Ignacio and Algora, Carlos},
  issn         = {0022-0248},
  keyword      = {GaInP solar cells,Ge autodoping,III-V semiconductor,Multijunction solar cell,EU Horizon 2020,NEXTNANOCELLS,Grant 656208 },
  language     = {eng},
  month        = {10},
  pages        = {378--383},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Effect of Ge autodoping during III-V MOVPE growth on Ge substrates},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2017.06.022},
  volume       = {475},
  year         = {2017},
}