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The VO2* defect in silicon

Lindström, Lennart LU ; Murin, LI ; Svensson, BG ; Markevich, VP and Hallberg, T (2003) In Physica B: Condensed Matter 340. p.509-513
Abstract
The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400degreesC. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these 0 atoms give rise to one infrared absorption band at 895.5 cm(-1) at 10 K. We report on an experimentally discovered bistability of this defect. We suggest an alternative configuration, VO2*, where only one O atom is inside the vacancy while the second 0 atom is in a backbond position. Two vibrational 2 bands, at 928.4 and 1003.8 cm(-1) (positions at 15 K), are assigned to this configuration. (C) 2003 Elsevier B.V. All rights reserved.
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author
; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
vacancy-dioxygen, silicon, defects, LVMs
in
Physica B: Condensed Matter
volume
340
pages
509 - 513
publisher
Elsevier
external identifiers
  • wos:000188300200103
  • scopus:0347134678
ISSN
0921-4526
DOI
10.1016/j.physb.2003.09.146
language
English
LU publication?
yes
id
f7959b29-b974-43db-aba8-b35c16cda405 (old id 288919)
date added to LUP
2016-04-01 15:17:32
date last changed
2022-01-28 04:37:42
@article{f7959b29-b974-43db-aba8-b35c16cda405,
  abstract     = {{The vacancy-dioxygen complex (VO2) is one of the main defects formed in irradiated Cz-Si crystals upon annealing (or irradiation) in the temperature range 300-400degreesC. In this defect two oxygen atoms share a vacancy, each bonded to two silicon neighbors. Independent vibrations of these 0 atoms give rise to one infrared absorption band at 895.5 cm(-1) at 10 K. We report on an experimentally discovered bistability of this defect. We suggest an alternative configuration, VO2*, where only one O atom is inside the vacancy while the second 0 atom is in a backbond position. Two vibrational 2 bands, at 928.4 and 1003.8 cm(-1) (positions at 15 K), are assigned to this configuration. (C) 2003 Elsevier B.V. All rights reserved.}},
  author       = {{Lindström, Lennart and Murin, LI and Svensson, BG and Markevich, VP and Hallberg, T}},
  issn         = {{0921-4526}},
  keywords     = {{vacancy-dioxygen; silicon; defects; LVMs}},
  language     = {{eng}},
  pages        = {{509--513}},
  publisher    = {{Elsevier}},
  series       = {{Physica B: Condensed Matter}},
  title        = {{The VO2* defect in silicon}},
  url          = {{http://dx.doi.org/10.1016/j.physb.2003.09.146}},
  doi          = {{10.1016/j.physb.2003.09.146}},
  volume       = {{340}},
  year         = {{2003}},
}