Identification of the gallium vacancy-oxygen pair defect in GaN
(2009) In Physical Review B (Condensed Matter and Materials Physics) 80(15).- Abstract
- Cation vacancies like V-Ga, V-Al and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magnetic resonance even under illumination. In this Brief Report, we demonstrate an efficient way to make cation vacancy defects in GaN detectable by electron paramagnetic resonance and present our identification of the VGaON pair in GaN which is the model material for the III-nitrides and their alloys.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1504805
- author
- Son, N. T. ; Hemmingsson, C. G. ; Paskova, T. ; Evans, K. R. ; Usui, A. ; Morishita, N. ; Ohshima, T. ; Isoya, J. ; Monemar, Bo LU and Janzen, E.
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 80
- issue
- 15
- article number
- 153202
- publisher
- American Physical Society
- external identifiers
-
- wos:000271352000007
- scopus:71449106333
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.80.153202
- language
- English
- LU publication?
- yes
- id
- f8d42c48-3b18-4d5c-a776-9f109c3f2ddf (old id 1504805)
- date added to LUP
- 2016-04-01 14:55:21
- date last changed
- 2022-03-29 23:31:28
@article{f8d42c48-3b18-4d5c-a776-9f109c3f2ddf, abstract = {{Cation vacancies like V-Ga, V-Al and their complexes with oxygen are predicted to be abundant in III-nitrides and to play an important role in nonradiative recombination. Appearing in triple or double negatively charged states, they are not paramagnetic and have not so far been detected by magnetic resonance even under illumination. In this Brief Report, we demonstrate an efficient way to make cation vacancy defects in GaN detectable by electron paramagnetic resonance and present our identification of the VGaON pair in GaN which is the model material for the III-nitrides and their alloys.}}, author = {{Son, N. T. and Hemmingsson, C. G. and Paskova, T. and Evans, K. R. and Usui, A. and Morishita, N. and Ohshima, T. and Isoya, J. and Monemar, Bo and Janzen, E.}}, issn = {{1098-0121}}, language = {{eng}}, number = {{15}}, publisher = {{American Physical Society}}, series = {{Physical Review B (Condensed Matter and Materials Physics)}}, title = {{Identification of the gallium vacancy-oxygen pair defect in GaN}}, url = {{http://dx.doi.org/10.1103/PhysRevB.80.153202}}, doi = {{10.1103/PhysRevB.80.153202}}, volume = {{80}}, year = {{2009}}, }