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From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Potts, Heidi LU ; Friedl, Martin ; Amaduzzi, Francesca ; Tang, Kechao ; Tütüncüoglu, Gözde ; Matteini, Federico ; Alarcon Lladó, Esther ; McIntyre, Paul C and Fontcuberta i Morral, Anna (2016) In Nano Letters 16(1). p.43-637
Abstract

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, and composition are key to the control of their physical properties. In this work, we present how to grow catalyst-free InAs1-xSbx nanowires, which are stacking fault and twin defect-free over several hundreds of nanometers. We evaluate the impact of their crystal phase purity by probing their electrical properties in a transistor-like configuration and by measuring the phonon-plasmon interaction by Raman spectroscopy. We also highlight the importance of high-quality dielectric coating... (More)

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, and composition are key to the control of their physical properties. In this work, we present how to grow catalyst-free InAs1-xSbx nanowires, which are stacking fault and twin defect-free over several hundreds of nanometers. We evaluate the impact of their crystal phase purity by probing their electrical properties in a transistor-like configuration and by measuring the phonon-plasmon interaction by Raman spectroscopy. We also highlight the importance of high-quality dielectric coating for the reduction of hysteresis in the electrical characteristics of the nanowire transistors. High channel carrier mobilities and reduced hysteresis open the path for high-frequency devices fabricated using InAs1-xSbx nanowires.

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author
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanostructures, Nanotechnology, Nanowires, Semiconductors
in
Nano Letters
volume
16
issue
1
pages
7 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:84957991265
  • pmid:26686394
ISSN
1530-6992
DOI
10.1021/acs.nanolett.5b04367
language
English
LU publication?
no
id
fa3c213a-5a45-4c60-9dda-f01a93a0bd8a
date added to LUP
2018-03-02 09:50:27
date last changed
2019-12-10 07:23:31
@article{fa3c213a-5a45-4c60-9dda-f01a93a0bd8a,
  abstract     = {<p>III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, and composition are key to the control of their physical properties. In this work, we present how to grow catalyst-free InAs1-xSbx nanowires, which are stacking fault and twin defect-free over several hundreds of nanometers. We evaluate the impact of their crystal phase purity by probing their electrical properties in a transistor-like configuration and by measuring the phonon-plasmon interaction by Raman spectroscopy. We also highlight the importance of high-quality dielectric coating for the reduction of hysteresis in the electrical characteristics of the nanowire transistors. High channel carrier mobilities and reduced hysteresis open the path for high-frequency devices fabricated using InAs1-xSbx nanowires.</p>},
  author       = {Potts, Heidi and Friedl, Martin and Amaduzzi, Francesca and Tang, Kechao and Tütüncüoglu, Gözde and Matteini, Federico and Alarcon Lladó, Esther and McIntyre, Paul C and Fontcuberta i Morral, Anna},
  issn         = {1530-6992},
  language     = {eng},
  month        = {01},
  number       = {1},
  pages        = {43--637},
  publisher    = {The American Chemical Society (ACS)},
  series       = {Nano Letters},
  title        = {From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.5b04367},
  doi          = {10.1021/acs.nanolett.5b04367},
  volume       = {16},
  year         = {2016},
}